UV laser micromachining technology becomes a key method in the field of micro manufacturing technology due to its unique advantages,especially for hard and brittle materials precision processing.This paper introduces an experimental investigation on the fine structure processing of SiC wafer surface using 266 nm UV solid-state laser pulses with a wavelength of 266 nm.The study involves the calculation of ablation threshold due to ablation of SiC by UV solid state laser through static irradiation of SiC surface and the relation between pulse energy and diameter in holes produced by UV solid-state laser.The paper describes the way the relation between the width and depth of the groove and key parameters of UV solid-state laser is obtained by fabricating microgrooves under different experimental conditions,based on line-scanning experiment.Results reveal that the groove width and depth increases as the laser density increases.The production of the cleaner tiny structures in the SiC surface by scanning along the track using focused UV solid-state laser beam provides guidance for the precision machining of micro-structures.%紫外固体激光微细加工以其独特优势,成为微结构加工的重要方法之一,尤其对硬脆难加工类宽带隙材料的微细加工.利用266 nm紫外固体激光微细加工系统,在宽带隙材料SiC上进行实验研究.应用扫描电子显微镜和光学显微镜等检测技术对样件进行检测.采用紫外固体激光静态照射SiC晶片表面,紫外固体激光烧蚀孔径和单脉冲能量的关系,计算266 nm紫外固体激光烧蚀SiC晶片的烧蚀阈值.通过直线扫描实验,在不同实验条件下,在SiC晶片表面加工微槽,获得微槽的宽度和深度与激光主要参数之间的关系.结果表明:激光能量密度可以改变槽宽和槽深,而扫描次数对槽宽基本无影响,而对槽深影响较大.利用聚焦的紫外固体激光束沿着轨迹扫描,在SiC晶片上加工出典型的微细结构,实现微细结构的精密加工.
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