Half bridge power factor correction topology is one of the bridgeless power factor correction topologies, it can achieve high efficiency due to its simple structure and less devices in of current loop. However, the voltage stress of devices in this kind of topology is relatively high. If the silicon IGBT is used in this topology, it will be hard to improve the efficiency because of its high switching loss. The silicon carbide MOSFET can keep the lower on-state resistance at high voltage, and also has lower switching loss. In this paper, the silicon carbide MOSFET is used, to work at a triangular current mode (TCM) which achieves zero voltage switching mode to further reduce the switching loss. In this way, the calculation of all the key parameters is described in detail in this paper, and a 1 100 W prototype is built, which achieves high efficiency, and the peak efficiency reaches 99.2%.%半桥功率因数校正PFC（power factor correction）拓扑由于其具有较少的电流回路器件数，因而导通损耗小、效率高。但是，该拓扑中开关器件电压应力大，因此如果选用高压的IGBT 作为开关器件，则开关损耗很大。新型的碳化硅MOSFET由于兼顾了高耐压与低通态电阻，其具有较小的开关损耗，可以降低开关损耗，尤其是关断损耗。但由于高频工作时其开通损耗仍然较大，严重制约变换器效率的提高。因此，利用碳化硅MOSFET优良的开关特性，采用电感电流三角波模式（TCM）的控制方式，使器件工作在零电压开通状态下，进一步降低开关损耗。针对这种控制方式，详细叙述了各个关键参数的计算，并设计搭建了一台1100 W的全碳化硅半桥功率因数校正变换器，其达到了较高的效率，峰值效率达到了99.2%。
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