采用单靶磁控溅射方法分别在玻璃和镀有Mo背电极的Soda-lime玻璃衬底上沉积Cu( In0.7Ga0.3)Se2 (CIGS)薄膜.研究了靶功率变化对CIGS薄膜的晶体结构、表面形貌和光学性能的影响.采用XRD表征薄膜的组织结构,SEM和EDS观察和分析薄膜的表面形貌和成分,紫外-可见光分光光度计测试薄膜的透过率光谱.结果表明,在不同功率下制备的CIGS薄膜均具有(112)面择优取向.当溅射功率为300W时,CIGS薄膜的表面形貌最平整,结晶最均匀,n(Cu)∶n(In)∶n(Ga)∶n(Se)=30.00∶15.01∶3.97∶51.03组分符合高效吸收层的要求.溅射沉积的CIGS薄膜对可见光的平均透过率低于2％,光学带隙约为1.4eV.%CuInGaSe2 (CIGS) films were deposited on glass and Mo-coated soda-lime glass desperately by magnetron sputtering process with CIGS alloy target. The CIGS films were characterized with XRD, SEM and EDS to investigate the microstructure, surface morphology and composition. The optical properties of the CIGS films were tested by UV-vis spectrophotometer. The results showed that regardless of the target power, the CIGS films all process a (112) preferred orientation. The CIGS thin films are compact with flat surface and uniform crystallization when the target power is 300W. The ratio of n(Cu) : n(In) : n(Ga) : n(Se) is 30. 00 : 15. 01 : 3. 97 : 51. 03, which meets the requirement of high efficiency absorption layer. Average optical transmittance of the CIGS films in a visible range is lower than 2%, optical band-gap is about 1. 4eV.
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