Based on the principle of traditional bandgap reference,a multi-output bandgap reference voltage source was de-signed by optimizing the circuit structure and eliminating the nonlinear term in base-emitter voltage of the bipolar transistor. The circuit was simulated with CSMC 0.5μm CMOS process model. The simulation results show that the temperature coefficient of bandgap reference voltage source is 3.1 ppm/℃ in the temperature range of -55℃~125℃,and the output reference voltage is 1.2994 V at 5 V supply voltage;PSRR of the bandgap reference voltage source is 84.5 dB at low frequency,and several refer-ence voltages between 0~5V can be output simultaneously at 5 V supply voltage.%基于传统带隙基准的原理，通过优化电路结构，消除双极晶体管基极-发射极电压中的非线性项，设计了一种带2阶补偿的多输出带隙基准电压源。整个电路采用CSMC 0.5μm CMOS工艺模型进行仿真。Spectre仿真结果表明，在-55～125℃的温度范围内，带隙基准电压源的温度系数为3.1 ppm/℃，在5 V电源电压下，输出基准电压为1.2994 V；带隙基准电压源的电源抑制比在低频时为84.5 dB；在5 V电源电压下，可以同时输出0～5 V多个基准电压。
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