The heat transfer in the high power module is studied by using Ansys, and observe its power under different conditions of heat transfer. Eventually,the IGBT chip to the bottom surface of copper substrate at different temperatures can be used to calculate the thermal resistance of chip crust. Then the thermal property of the product preassessment in order to better provide for the design basis for improved design.The experimental platform is set up and a series of experimental is measured, and then the simulation models and results are compared, it indicate that they have a good consistency. In the convective case,when the IGBT high power module temperature reaches about 92 ℃ ,the power of the heating device is about 121 W.The high power module of the crust thermal resistance is 0.2 ℃/W.%采用Ansys软件对大功率IGBT模块内部的传热机理进行分析研究,观察其对应不同功率等级下的IGBT内部传热情况,最后通过IGBT芯片到铜基板底面的不同温度来计算芯片的结壳热阻.对IGBT模块的热性能进行预评估,以便更好地为设计人员提供设计方案的依据.而且以搭建的实验平台为基础,测得一系列实验数据,并与仿真模型的结果进行比较,结果表明两者具有很好的一致性.在对流情况下,当大功率模块内的IGBT芯片结温达到约92℃时,功率器件的发热量约为121 W,而大功率模块内的结壳热阻为0.2℃/W.
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