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A framework for studying dynamics and stability of diffusive–reactive interfaces with application to Cu6Sn5 intermetallic compound growth

机译:研究扩散-反应界面的动力学和稳定性的框架及其在Cu6Sn5金属间化合物生长中的应用

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摘要

Often during phase growth, the rate of accretion, on the one hand, is determined by a competition between bulk diffusion and surface reaction rate. The morphology of the phase interface, on the other hand, is determined by an interplay between surface diffusivity and surface reaction rate. In this study, a framework to predict the growth and the morphology of an interface by modelling the interplay between bulk diffusion, surface reaction rate and surface diffusion is developed. The framework is demonstrated using the example of Cu–Sn intermetallic compound growth that is of significance to modern microelectronic assemblies. In particular, the dynamics and stability of the interface created when Cu and Sn react to form the compound Cu6Sn5 is explored. Prior experimental observations of the Cu6Sn5–Sn interface have shown it to possess either a scalloped, flat or needle-shaped morphology. Diffuse interface simulations are carried out to elucidate the mechanism behind the interface formation. The computational model accounts for the bulk diffusion of Cu through the intermetallic compound, reaction at the interface to form Cu6Sn5, surface diffusion of Cu6Sn5 along the interface and the influence of the electric current density in accelerating the bulk diffusion of Cu. A stability analysis is performed to identify the conditions under which the interface evolves into a flat, scalloped or needle-shaped structure.
机译:通常,在相生长过程中,一方面,堆积速率取决于本体扩散与表面反应速率之间的竞争关系。另一方面,相界面的形态由表面扩散率和表面反应速率之间的相互作用决定。在这项研究中,建立了一个通过模拟本体扩散,表面反应速率和表面扩散之间的相互作用来预测界面的生长和形态的框架。以对现代微电子组件具有重要意义的Cu-Sn金属间化合物生长为例演示了该框架。特别是,研究了当Cu和Sn反应形成化合物Cu6Sn5时所产生的界面的动力学和稳定性。先前对Cu6Sn5–Sn界面的实验观察表明,它具有扇贝形,扁平形或针形形态。进行了扩散界面模拟,以阐明界面形成背后的机理。该计算模型考虑了Cu通过金属间化合物的整体扩散,在界面处形成Cu6Sn5的反应,Cu6Sn5沿界面的表面扩散以及电流密度对加速Cu的整体扩散的影响。进行稳定性分析以识别界面演变成扁平,扇形或针状结构的条件。

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