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首页> 美国卫生研究院文献>Scientific Reports >Electrical analysis of c-Si/CGSe monolithic tandem solar cells by using a cell-selective light absorption scheme
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Electrical analysis of c-Si/CGSe monolithic tandem solar cells by using a cell-selective light absorption scheme

机译：使用单元选择光吸收方案对c-Si / CGSe整体串联太阳能电池进行电学分析

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摘要

A monolithic tandem solar cell consisting of crystalline Si (c-Si)/indium tin oxide (ITO)/CuGaSe2 (CGSe) was demonstrated by stacking a CGSe solar cell on a c-Si/ITO solar cell to obtain a photovoltaic conversion efficiency of about 10%. Electrical analyses based on cell-selective light absorption were applied to individually characterize the photovoltaic performances of the top and bottom subcells. Illumination at a frequency that could be absorbed only by a targeted top or bottom subcell permitted measurement of the open-circuit voltage of the target subcell and the shunt resistance of the non-target subcell. The cell parameters measured from each subcell were very similar to those of the corresponding single cell, confirming the validity of the suggested method. In addition, separating the light absorption intensities at the top and bottom subcells made us measure the bias-dependent photocurrent for each subcell. The series resistance of a c-Si/ITO/CGSe cell subjected to bottom-cell limiting conditions was slightly large, implying that the tunnel junction was a little resistive or slightly beyond ohmic. This analysis demonstrated that aside from producing a slightly resistive tunnel junction, our fabrication processes were successful in monolithically integrating a CGSe cell onto a c-Si/ITO cell without degrading the performances of both cells.
机译：通过将CGSe太阳能电池堆叠在c-Si / ITO太阳能电池上以获得光伏转换效率为5％的单晶硅串联太阳能电池，该晶体由晶体Si（c-Si）/铟锡氧化物（ITO）/ CuGaSe2（CGSe）组成。大约10％应用基于电池选择性光吸收的电分析来分别表征顶部和底部子电池的光伏性能。以只能被目标顶部或底部子电池吸收的频率进行照明允许测量目标子电池的开路电压和非目标子电池的分流电阻。从每个子电池测得的电池参数与相应的单个电池的参数非常相似，从而证实了所建议方法的有效性。另外，分离顶部和底部子电池的光吸收强度使我们可以测量每个子电池的偏置相关光电流。受到底部电池限制条件的c-Si / ITO / CGSe电池的串联电阻稍大，这意味着隧道结的电阻很小或略大于欧姆。该分析表明，除了产生稍微电阻的隧道结外，我们的制造工艺还成功地将CGSe电池单片集成到c-Si / ITO电池上，而不会降低两个电池的性能。

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