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首页> 美国卫生研究院文献>Nanoscale Research Letters >Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer
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Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer

机译：理想原子层沉积Al2O3隧道开关层改善了掺Mg的LiNbO3薄膜的铁电性能

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Bilayer structures composed of 5% Mg-doped LiNbO3 single-crystal films and ultrathin Al2O3 layers with thickness ranging from 2 to 6 nm have been fabricated by using ion slicing technique combined with atomic layer deposition method. The transient domain switching current measurement results reveal that the P-V hysteresis loops are symmetry in type II mode with single voltage pulse per cycle, which may be attributed to the built-in electric field formed by asymmetric electrodes and compensation of an internal imprint field. Besides, the inlaid Al2O3, as an ideal tunnel switch layer, turns on during ferroelectric switching, but closes during the post-switching or non-switching under the applied pulse voltage. The Al2O3 layer blocks the adverse effects such as by-electrode charge injection and improves the fatigue endurance properties of Mg-doped LiNbO3 ferroelectric capacitors. This study provides a possible way to improve the reliability properties of ferroelectric devices in the non-volatile memory application.Electronic supplementary materialThe online version of this article (10.1186/s11671-019-2970-6) contains supplementary material, which is available to authorized users.
机译：采用离子切片技术结合原子层沉积法，制备了由5％掺Mg的LiNbO3单晶膜和厚度为2〜6nm的超薄Al2O3层组成的双层结构。瞬态域开关电流测量结果表明，P-V磁滞回线在II型模式下是对称的，每个周期只有一个电压脉冲，这可能归因于由不对称电极形成的内置电场和内部压印场的补偿。此外，作为理想的隧道开关层，镶嵌的Al2O3在铁电开关期间导通，但在施加的脉冲电压下在后开关或不开关时闭合。 Al 2 O 3层阻止了诸如副电极电荷注入的不利影响，并改善了掺Mg的LiNbO 3铁电电容器的耐疲劳性能。这项研究为提高非易失性存储器应用中铁电设备的可靠性提供了一种可能的方法。电子补充材料本文的在线版本（10.1186 / s11671-019-2970-6）包含补充材料，授权使用用户。

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