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首页> 美国卫生研究院文献>Nanoscale Research Letters >Numerical simulations of the current-matching effect and operation mechanisms on the performance of InGaN/Si tandem cells
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Numerical simulations of the current-matching effect and operation mechanisms on the performance of InGaN/Si tandem cells

机译：电流匹配效应和工作机制对InGaN / Si串联电池性能的数值模拟

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Numerical simulations are conducted to study the current-matching effect and operation mechanisms in and to design the optimized device structure of InGaN/Si tandem cells. The characteristics of short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF), and conversion efficiency (η) of InGaN/Si tandem cells are determined by the current-matching effect. The similar trend of η to that of Jsc shows that Jsc is a dominant factor in determining the performance of InGaN/Si tandem cells. In addition, the combined effects of the Jsc, Voc, and FF lead to an optimized η in the medium-indium, xpn-InGaNInGaN‒to‒Si, InGaN/Si tandem cell. At xpn-InGaNInGaN‒to‒Si, the Jsc of the InGaN subcell is equal to that of the Si subcell such that an InGaN/Si tandem cell reaches the current matching condition to operate at the maximum power point. Similar to the Jsc and FF, the η for low- xpn-InGaN<xpn‒InGaNInGaN‒to‒Si and high-In xpn-InGaN>xpn-InGaNInGaN‒to‒Si InGaN/Si tandem cells are InGaN- and Si subcell-limited, respectively. Furthermore, the p- and n-layer thicknesses, indium content, and position of depletion region of InGaN subcell should be adjusted to reapportion the light between the two subcells and to achieve the maximum conversion efficiency. With appropriate thicknesses of p- and n-InGaN, In0.5–0.6Ga0.5–0.4 N/Si tandem cells can exhibit as high as approximately 34% to 36.5% conversion efficiency, demonstrating that a medium-indium InGaN/Si tandem cell results in a high-efficiency solar cell. Simulation results determine that the current-matching effect and operation mechanisms of InGaN/Si tandem cells can be utilized for efficiency enhancement through the optimized device structures.
机译：进行了数值模拟，以研究InGaN / Si串联电池中的电流匹配效应和工作机理，并设计了优化的器件结构。 InGaN / Si串联电池的短路电流密度（Jsc），开路电压（Voc），填充系数（FF）和转换效率（η）的特性取决于电流匹配效应。 η与Jsc相似的趋势表明，Jsc是决定InGaN / Si串联电池性能的主要因素。另外，Jsc，Voc和FF的综合作用导致中等铟中<η的最佳η，xmlns：mml =“ http://www.w3.org/1998/Math/MathML” id = “ M1”名称=“ 1556-276X-9-652-i1”溢出=“ scroll”> x p n - InGaN InGaN ‒ t o ‒ S i ，InGaN / Si串联电池。在 x p n -< / mo> InGaN InGaN ‒ t o ‒ S i ，InGaN子电池的Jsc等于Si子电池的Jsc，以使InGaN / Si串联电池达到电流匹配条件并以最大功率工作点。与Jsc和FF相似，低位 x p n - InGaN / mo> x p < mi mathvariant =“ normal”> n ‒ InGaN InGaN ‒ t o ‒ < mi mathvariant =“ normal”> S i 和高输入<数学xmlns：mml =“ http://www.w3.org/1998/Math/MathML” id =“ M4” name =“ 1556-276X-9-652-i4”溢出=“ scroll”> x p n - InGaN x p < mfenced open =“（” close =“）”> n - InGaN < mrow> InGaN ‒ t o < mo> ‒ S i InGaN / Si串联电池分别受InGaN和Si子电池限制。此外，应调整InGaN子电池的p层和n层厚度，铟含量以及耗尽区的位置，以在两个子电池之间重新分配光并实现最大转换效率。通过适当厚度的p-和n-InGaN，In0.5-0.6Ga0.5-0.4 N / Si串联电池可以显示高达约34％至36.5％的转换效率，表明中等铟InGaN / Si串联电池产生高效的太阳能电池。仿真结果表明，通过优化的器件结构，可以利用InGaN / Si串联电池的电流匹配效应和工作机制来提高效率。

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