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Effect of Ag/Al co-doping method on optically p-type ZnO nanowires synthesized by hot-walled pulsed laser deposition

机译:Ag / Al共掺杂方法对热壁脉冲激光沉积合成p型ZnO纳米线的影响

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摘要

Silver and aluminum-co-doped zinc oxide (SAZO) nanowires (NWs) of 1, 3, and 5 at.% were grown on sapphire substrates. Low-temperature photoluminescence (PL) was studied experimentally to investigate the p-type behavior observed by the exciton bound to a neutral acceptor (A0X). The A0X was not observed in the 1 at.% SAZO NWs by low-temperature PL because 1 at.% SAZO NWs do not have a Ag-O chemical bonding as confirmed by XPS measurement. The activation energies (Ea) of the A0X were calculated to be about 18.14 and 19.77 meV for 3 and 5 at.% SAZO NWs, respectively, which are lower than the activation energy of single Ag-doped NW which is about 25 meV. These results indicate that Ag/Al co-doping method is a good candidate to make optically p-type ZnO NWs.
机译:在蓝宝石衬底上生长了1、3和5%原子百分比的银和铝共掺杂的氧化锌(SAZO)纳米线(NWs)。实验研究了低温光致发光(PL),以研究与中性受体(A 0 X)结合的激子所观察到的p型行为。低温PL在1%含量的SAZO NW中未观察到A 0 X,因为1%含量的SAZO NW没有通过XPS测量证实具有Ag-O化学键。计算出3%和5%at SAZO NW的A 0 X的活化能(Ea)分别约为18.14和19.77 meV,低于单个Ag-N-的活化能。掺杂的NW约为25 meV。这些结果表明,Ag / Al共掺杂方法是制备光学p型ZnO NW的理想选择。

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