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首页> 美国卫生研究院文献>Nanoscale Research Letters >Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer
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Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer

机译：Al掺杂ZnO籽晶层上具有ZnO纳米棒抗反射涂层的硅线太阳能电池的制备与表征

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In this study, we have fabricated and characterized the silicon [Si] wire solar cells with conformal ZnO nanorod antireflection coating [ARC] grown on a Al-doped ZnO [AZO] seed layer. Vertically aligned Si wire arrays were fabricated by electrochemical etching and, the p-n junction was prepared by spin-on dopant diffusion method. Hydrothermal growth of the ZnO nanorods was followed by AZO film deposition on high aspect ratio Si microwire arrays by atomic layer deposition [ALD]. The introduction of an ALD-deposited AZO film on Si wire arrays not only helps to create the ZnO nanorod arrays, but also has a strong impact on the reduction of surface recombination. The reflectance spectra show that ZnO nanorods were used as an efficient ARC to enhance light absorption by multiple scattering. Also, from the current-voltage results, we found that the combination of the AZO film and ZnO nanorods on Si wire solar cells leads to an increased power conversion efficiency by more than 27% compared to the cells without it.
机译：在这项研究中，我们已经制造并表征了在掺Al的ZnO [AZO]种子层上生长的具有保形ZnO纳米棒抗反射涂层[ARC]的硅[Si]线太阳能电池。通过电化学刻蚀制备垂直排列的硅线阵列，并通过旋涂掺杂剂扩散法制备p-n结。 ZnO纳米棒的水热生长之后，通过原子层沉积[ALD]在高纵横比的硅微线阵列上沉积AZO膜。在硅线阵列上引入ALD沉积的AZO膜不仅有助于创建ZnO纳米棒阵列，而且对减少表面重组也有很大的影响。反射光谱表明，ZnO纳米棒被用作有效的ARC，以通过多次散射增强光吸收。同样，从电流-电压结果来看，我们发现，与不使用AZO膜和ZnO纳米棒的Si线太阳能电池相结合，功率转换效率提高了27％以上。

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