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首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >IMPACT OF SEEDING INDIUM TIN OXIDE ON ZNO NANOROD ANTIREFLECTIVE LAYER IN SILICON HETEROJUNCTION SOLAR CELLS
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IMPACT OF SEEDING INDIUM TIN OXIDE ON ZNO NANOROD ANTIREFLECTIVE LAYER IN SILICON HETEROJUNCTION SOLAR CELLS

机译：阳性氧化铟锡对硅杂交太阳能电池ZnO纳米杆抗反射层的影响

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摘要

In this work we investigated the influence of fabrication procedure of indium tin oxide (ITO) seed layers, acting as front contacts in silicon heterojunction solar cells, on the growth of ZnO antireflective layers. Furthermore, ZnO nanorod growth out of ZnCl_2 and Zn(NO_3)_2 solution was compared. It was observed that for both ZnCl_2 and Zn(NO_3)_2 nanorod layers, the ITO sheet resistance affects the density and size of resulting nanorods. The most effective antireflective nanorod layers grew on an ITO layer with a sheet resistance of approximately 50 Ω_□. In this case, the nanorod layers had a suitable density, which was neither too low nor too high. The application of such a nanorod antireflective layer in a SHJ solar cell led to a relative gain in the short circuit current density by 0.6%.
机译：在这项工作中，我们研究了氧化铟锡（ITO）种子层的制造程序的影响，作用于硅杂交太阳能电池中的前触点，ZnO抗反射层的生长。此外，比较了ZnCl_2和Zn（NO_3）_2溶液的ZnO纳米棒生长。观察到，对于ZnCl_2和Zn（NO_3）_2纳米棒层，ITO薄片电阻影响得到的纳米棒的密度和尺寸。最有效的抗反射纳米棒层在ITO层上增长，薄层电阻约为50Ω□。在这种情况下，纳米棒层具有合适的密度，既不太低也不太高。这种纳米杆抗反射层在SHJ太阳能电池中的应用导致短路电流密度的相对增益0.6％。

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