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Preparation and Layer-by-Layer Solution Deposition of Cu(InGa)O2 Nanoparticles with Conversion to Cu(InGa)S2 Films

机译：Cu（InGa）O2纳米粒子的制备及其逐层溶液沉积并转化为Cu（InGa）S2膜

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摘要

We present a method of Cu(In,Ga)S2 (CIGS) thin film formation via conversion of layer-by-layer (LbL) assembled Cu-In-Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles were created via a novel flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films were assembled by alternately dipping quartz, Si, and/or Mo substrates into a solution of either polydopamine (PDA) or polystyrenesulfonate (PSS) and then in the CIGO-PAH dispersion to fabricate films as thick as 1–2 microns. PSS/CIGO-PAH films were found to be inadequate due to weak adhesion to the Si and Mo substrates, excessive particle diffusion during sulfurization, and mechanical softness ill-suited to further processing. PDA/CIGO-PAH films, in contrast, were more mechanically robust and more tolerant of high temperature processing. After LbL deposition, films were oxidized to remove polymer and sulfurized at high temperature under flowing hydrogen sulfide to convert CIGO to CIGS. Complete film conversion from the oxide to the sulfide is confirmed by X-ray diffraction characterization.
机译：我们提出了一种通过逐层（LbL）组装的Cu-In-Ga氧化物（CIGO）纳米粒子和聚电解质的转化形成Cu（In，Ga）S2（CIGS）薄膜的方法。通过使用金属硝酸盐前体的新型火焰喷涂热解方法创建了CIGO纳米粒子，随后将其涂覆有聚烯丙胺（PAH），并分散在水溶液中。通过将石英，Si和/或Mo基板交替浸入聚多巴胺（PDA）或聚苯乙烯磺酸盐（PSS）的溶液中，然后在CIGO-PAH分散体中制成厚度为1-2微米的膜，从而组装多层膜。发现PSS / CIGO-PAH膜由于与Si和Mo基底的粘合力弱，硫化过程中的过度颗粒扩散以及不适合进一步加工的机械柔软性而不足。相比之下，PDA / CIGO-PAH膜的机械强度更高，对高温处理的耐受性更高。 LbL沉积后，将膜氧化除去聚合物，并在高温下在流动的硫化氢下硫化以将CIGO转化为CIGS。通过X射线衍射表征证实了从氧化物到硫化物的完全膜转化。

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