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Towards the Fabrication of High-Aspect-Ratio Silicon Gratings by Deep Reactive Ion Etching

机译：通过深反应离子蚀刻制造高纵横比硅光栅

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摘要

The key optical components of X-ray grating interferometry are gratings, whose profile requirements play the most critical role in acquiring high quality images. The difficulty of etching grating lines with high aspect ratios when the pitch is in the range of a few micrometers has greatly limited imaging applications based on X-ray grating interferometry. A high etching rate with low aspect ratio dependence is crucial for higher X-ray energy applications and good profile control by deep reactive ion etching of grating patterns. To achieve this goal, a modified Coburn–Winters model was applied in order to study the influence of key etching parameters, such as chamber pressure and etching power. The recipe for deep reactive ion etching was carefully fine-tuned based on the experimental results. Silicon gratings with an area of 70 × 70 mm2, pitch size of 1.2 and 2 μm were fabricated using the optimized process with aspect ratio α of ~67 and 77, respectively.
机译：X射线光栅干涉测量法的关键光学分量是光栅，其简档要求在获取高质量图像中起最关键的作用。当间距在几微米的范围内时，蚀刻具有高纵横比的光栅线具有很大的成像应用，基于X射线光栅干涉测量。具有低纵横比依赖性的高蚀刻速率对于较高的X射线能量应用和光栅图案的深反应离子蚀刻来说是至关重要的。为了实现这一目标，应用了修改的Coburn-Winters模型以研究钥匙蚀刻参数的影响，例如腔室压力和蚀刻功率。基于实验结果，小心精细调整深反应离子蚀刻的配方。面积为70×70mm 2，俯仰尺寸为1.2和2μm的硅光栅分别使用宽高比α的优化方法分别制造〜67和77的纵横比。

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