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Design of experiment for the optimisation of deep reactive ion etching of silicon inserts for micro-fabrication

机译:优化用于微加工的硅插件的深反应离子刻蚀的实验设计

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摘要

The following paper describes a design of experiments investigation of the deep reactive of pillar structures on a silicon wafer. The etched wafers would subsequently be used as masters for the fabrication of nickel mould inserts for microinjection moulding. Undercuts occur when the pillar base has a smaller cross-section than the apex of the pillar. They therefore affect tolerances of the subsequent nickel mould, its strength and its de-mouldability from the silicon form. The response measured in these experiments was the degree of undercut of micro-scale (10 μm x 10 μm x 40 μm, 5 μm x 5 μm x 40 μm and 2 μm x 2 μm x 40 μm) The literature suggests that gas pressure, platen power, gas flow rate, phase switching times and mask size can all affect the degree of undercut. After examination of this literature, and of manufacturers guidelines, three parameters were selected for experimental testing: platen power, C 4F 8 gas flow rate during the passivation phase and switching times. Switching times was found to be the only statistically significant parameter for both 10x10 μm and 5x5 μm pillars. The 2x2 μm pillars were not successfully replicated and could therefore not undergo statistical evaluation.
机译:以下论文描述了对硅晶片上的柱状结构进行深度反应的实验设计。蚀刻的晶片随后将用作制造用于微注射成型的镍模具插入物的母盘。当立柱底部的横截面小于立柱顶点时,会发生底切。因此,它们影响随后的镍模的公差,强度和与硅模的脱模性。在这些实验中测得的响应是​​微缩的程度(10μmx 10μmx 40μm,5μmx 5μmx 40μm和2μmx 2μmx 40μm)。文献表明,气压压板功率,气体流速,相切换时间和掩模尺寸都会影响底切程度。在检查了这些文献和制造商的指南之后,选择了三个参数进行实验测试:压板功率,钝化阶段的C 4F 8气体流速和切换时间。发现切换时间是10x10μm和5x5μm柱的唯一统计上重要的参数。 2x2μm的柱子未成功复制,因此无法进行统计评估。

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