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首页> 外国专利> METHOD OF REDUCING REACTIVE ION ETCHING LAG IN DEEP- TRENCH SILICON ETCHING

METHOD OF REDUCING REACTIVE ION ETCHING LAG IN DEEP- TRENCH SILICON ETCHING

机译：减少深沟槽硅刻蚀中反应离子刻蚀的方法

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PROBLEM TO BE SOLVED: To provide a method of minimizing an RIE lag, which occurs during production of a DT in a DRAM having a large aspect ratio.;SOLUTION: Using this method, isotropic etching of a wafer can be prevented and hence a passivation film is formed to such a extent as to require to maintain a profile and shape of a DT in the wafer. The RIE process described here provides a partial DT etched in the wafer to attain a prescribed depth. This passivation film is grown to a certain thickness which is not sufficiently thick to block an opening of the deep-trench. In an alternative method, the passivation film is removed by a non-RIE process. The non-RIE process for removing the film may be wet etching using chemicals, such as hydrofluoric acid (buffered or unbuffered) or the like. Alternatively, a vapor phase of hydrofluoric anhydride or the like and/or un-ionized chemicals may be used. By controlling the film thickness, a prescribed depth of a DT for a high aspect ratio structure can be obtained.;COPYRIGHT: (C)2002,JPO
机译：解决的问题：提供一种使RIE滞后最小化的方法，该RIE滞后是在具有高深宽比的DRAM中制造DT时发生的;解决方案：使用该方法，可以防止晶片的各向同性蚀刻，因此可以钝化膜形成的程度应要求保持晶片中DT的轮廓和形状。此处描述的RIE工艺提供了在晶圆中蚀刻的部分DT，以达到规定的深度。该钝化膜生长到一定厚度，该厚度不足以阻挡深沟槽的开口。在替代方法中，通过非RIE工艺去除钝化膜。用于去除膜的非RIE工艺可以是使用诸如氢氟酸（缓冲的或非缓冲的）之类的化学药品的湿蚀刻。或者，可以使用氢氟酸酐等和/或未电离的化学药品的气相。通过控制膜厚，可以获得高纵横比结构的DT的预定深度。;版权所有：（C）2002，JPO

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