Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures

F. Marty; L. Rousseau; B. Saadany; B. Mercier; O. Francais; Y. Mita; T. Bourouina

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Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures

机译：基于深反应离子刻蚀的硅高级刻蚀，用于硅高纵横比微结构和三维微纳结构

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Different processes involving an inductively coupled plasma reactor are presented either for deep reactive ion etching or for isotropic etching of silicon. On one hand, high aspect ratio microstructures with aspect ratio up to 107 were obtained on sub-micron trenches. Application to photonic MEMS is presented. Isotropic etching is also used either alone or in combination with anisotropic etching to realize various 3D shapes.

机译：对于深反应离子蚀刻或硅的各向同性蚀刻，提出了涉及电感耦合等离子体反应器的不同工艺。一方面，在亚微米沟槽上获得了具有高达107的长宽比的高长宽比的微结构。介绍了在光子MEMS中的应用。各向同性蚀刻也可单独使用或与各向异性蚀刻结合使用，以实现各种3D形状。

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来源
《Microelectronics journal》 |2005年第7期|p.673-677|共5页
作者
F. Marty; L. Rousseau; B. Saadany; B. Mercier; O. Francais; Y. Mita; T. Bourouina;
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作者单位

ESIEE, Ecole Superieure d'Ingenieurs en Electrotechnique et Electronique, Equipe Systemes de Communication el Microsystemes, ESYCOM—EA 2552, 2 Bd Blaise Pascal, 93162 Noisy-le-Grand, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词
micromachining; DRIE; HARMS; sub-micron; 3D; silicon;

机译：微加工;DRIE;HARMS;亚微米;3D;硅;

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1. Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio: [J] . Tiantong Xu, Zhi Tao, Hanqing Li, Advances in Mechanical Engineering . 2017,第12期

机译：深度反应离子蚀刻参数对具有高纵横比极深硅蚀刻工艺蚀刻速率和表面形态的影响：
2. Maximum achievable aspect ratio in deep reactive ion etching of silicon due to aspect ratio dependent transport and the microloading effect [J] . Junghoon Yeom, Yan Wu, John C. Selby, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2005,第6期

机译：由于依赖于纵横比的传输和微负载效应，在硅的深反应离子刻蚀中可实现的最大纵横比
3. High aspect ratio micro- and nano-machining of silicon using time-multiplexed reactive ion etching [J] . Z. Sanaee, M. Poudineh, M. Abdolahad, Journal of Micromechanics and Microengineering . 2011,第12期

机译：使用时分多路反应离子刻蚀技术对硅进行高深宽比的微加工和纳米加工
4. ADVANCED SILICON ETCHING TECHNIQUES BASED ON DEEP REACTIVE ION ETCHING (DRIE) FOR SILICON HARMS AND 3D MICRO- AND NANO-STRUCTURES [C] . F.Marty, L.Rousseau, B.Saadany, Conference on European Micro and Nano Systems(EMN04): First Issue Advances amp; Applications for Micro amp; Nano Systems; 20041020-21; Paris(FR) . 2004

机译：基于深度反应离子刻蚀（DRIE）的先进硅刻蚀技术，用于硅损伤以及3D微观和纳米结构
5. Dry etching of high aspect ratio silicon microstructures in high density plasma sources for microelectromechanical systems. [D] . Weigold, Jason Weldon. 2000

机译：在微机电系统的高密度等离子体源中干法蚀刻高纵横比的硅微结构。
6. Towards the Fabrication of High-Aspect-Ratio Silicon Gratings by Deep Reactive Ion Etching [O] . Zhitian Shi, Konstantins Jefimovs, Lucia Romano, 2020

机译：通过深反应离子蚀刻制造高纵横比硅光栅
7. Fabrication of high-aspect ratio silicon nanopillars and nanocones using deep reactive ion etching [O] . C. Fischer, J. W. Menezes, S. A. Moshkalev, 2009

机译：使用深反应离子蚀刻制备高纵横比硅纳米粒子和纳米能
8. Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures using a Time-Multiplexed Etch-Passivate Process [R] . Evans, Laura J., Beheim, Glenn M. 2006

机译：采用时间复用蚀刻 - 钝化工艺的高纵横比siC微结构深反应离子刻蚀（DRIE）

Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures

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