Deterioration of Mechanical Properties of MBE-Grown, Metastable Semiconductor Layer with Time: the Case of Zinc Blende MnTe

Adamiak S.; Dynowska E.; Dziedzic A.; Szmuc K.; Janik E.; Wiater M.; Wojtowicz T.; Szuszkiewicz W.

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Deterioration of Mechanical Properties of MBE-Grown, Metastable Semiconductor Layer with Time: the Case of Zinc Blende MnTe

机译：MBE生长的亚稳态半导体层的机械性能随时间而变差：以锌共混物MnTe为例

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Several few mu m thick (001)-oriented, metastable MnTe layers with the zinc blende structure grown onto (001) GaAs substrate by MBE during different periods for the last twenty years were investigated by the scanning electron microscopy, atomic force microscopy, X-ray diffraction, and nanoindentation methods. A partial decomposition of the oldest investigated layers was demonstrated. An important decrease of Young's modulus from about 34 GPa to about 17 GPa, resulting from a deterioration of the crystal structure of such layers, was found.

机译：通过扫描电子显微镜，原子力显微镜，X-射线显微镜研究了过去20年中MBE在不同时期在（001）GaAs衬底上生长的具有锌混合结构的几微米厚（001）取向的亚稳MnTe层。射线衍射和纳米压痕方法。证明了最古老的研究层的部分分解。发现由于这种层的晶体结构的劣化，导致杨氏模量从约34GPa显着降低至约17GPa。

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来源
《Acta Physica Polonica》 |2016年第5期|1248-1250|共3页
作者
Adamiak S.; Dynowska E.; Dziedzic A.; Szmuc K.; Janik E.; Wiater M.; Wojtowicz T.; Szuszkiewicz W.;
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作者单位

Univ Rzeszow, Fac Math & Nat Sci, S Pigonia 1, PL-35310 Rzeszow, Poland;

Polish Acad Sci, Inst Phys, Aleja Lotnikow 32-46, PL-02668 Warsaw, Poland;

Univ Rzeszow, Fac Math & Nat Sci, S Pigonia 1, PL-35310 Rzeszow, Poland;

Univ Rzeszow, Fac Math & Nat Sci, S Pigonia 1, PL-35310 Rzeszow, Poland;

Polish Acad Sci, Inst Phys, Aleja Lotnikow 32-46, PL-02668 Warsaw, Poland;

Polish Acad Sci, Inst Phys, Aleja Lotnikow 32-46, PL-02668 Warsaw, Poland;

Polish Acad Sci, Inst Phys, Aleja Lotnikow 32-46, PL-02668 Warsaw, Poland;

Univ Rzeszow, Fac Math & Nat Sci, S Pigonia 1, PL-35310 Rzeszow, Poland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
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正文语种 eng
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1. Neel temperature of zinc-blende, MBE-grown MnTe layers: modification by the crystal growth conditions [J] . W. Szuszkiewicz, E. Dynowska, J. Z. Domagala, Physica Status Solidi. C, Conferences and critical reviews . 2004,第4期

机译：掺锌，MBE生长的MnTe层的Neel温度：受晶体生长条件的影响
2. Growth of the metastable zinc-blende MnTe films on highly dissimilar perovskite SrTiO 3 (001) substrates by molecular beam epitaxy [J] . Xuanting Zhu, Kun Song, Kai Tang, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2017,第期

机译：在高度不同的钙钛矿SRTIO中生长含有锌 - 闪烁MNTE薄膜SRTIO 3 （001）基材通过分子束外延
3. Metastable cubic zinc-blende Ⅲ/Ⅴ semiconductors: Growth and structural characteristics [J] . Andreas Beyer, Wolfgang Stolz, Kerstin Volz Progress in crystal growth and characterization of materials . 2015,第2a4期

机译：亚稳态立方闪锌矿Ⅲ/Ⅴ族半导体：生长和结构特征
4. Néel temperature of zinc-blende, MBE-grown MnTe layers: modification by the crystal growth conditions [C] . W. Szuszkiewicz, E. Dynowska, J. Z. Domagala, International Conference on II-VI Compounds . 2004

机译：锌熔融的Néel温度，MBE-生长的MNTE层：通过晶体生长条件改性
5. Spin transport in strained non-magnetic zinc blende semiconductors. [D] . Moehlmann, Benjamin James. 2012

机译：应变非磁性锌混合半导体中的自旋传输。
6. Mechanical Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals [O] . Hongbo Qin, Xinghe Luan, Chuang Feng, 2017

机译：纤锌矿和掺锌锌GaN晶体的机械热力学和电子性质
7. Spin lifetimes and strain-controlled spin precession of drifting electrons in zinc blende type semiconductors [O] . Beck, M., Metzner, C., Malzer, S., 2005

机译：旋转寿命和应变控制的漂移旋转进动闪锌矿型半导体中的电子
8. Interstitial Potential Differences, Electro-Negativity Differences, and Effective Ionic Charges in Zinc-Blende-Type Semiconductors. [R] . Frensley, W. R., Kroemer, H. 1976

机译：锌 - 闪锌矿型半导体中的间隙电位差，电负性差和有效离子电荷。

Deterioration of Mechanical Properties of MBE-Grown, Metastable Semiconductor Layer with Time: the Case of Zinc Blende MnTe

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