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首页> 外文期刊>Advanced Functional Materials >Epitaxy of Single-Crystalline GaN Film on CMOS-Compatible Si(100) Substrate Buffered by Graphene
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Epitaxy of Single-Crystalline GaN Film on CMOS-Compatible Si(100) Substrate Buffered by Graphene

机译：石墨烯缓冲的CMOS兼容Si（100）衬底上的单晶GaN膜的外延

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摘要

Fabricating single-crystalline gallium nitride (GaN)-based devices on a Si(100) substrate, which is compatible with the mainstream complementary metal-oxide-semiconductor circuits, is a prerequisite for next-generation high-performance electronics and optoelectronics. However, the direct epitaxy of single-crystalline GaN on a Si(100) substrate remains challenging due to the asymmetric surface domains of Si(100), which can lead to polycrystalline GaN with a two-domain structure. Here, by utilizing single-crystalline graphene as a buffer layer, the epitaxy of a single-crystalline GaN film on a Si(100) substrate is demonstrated. The in situ treatment of graphene with NH3 can generate sp(3) C Symbol of the Klingon Empire N bonds, which then triggers the nucleation of nitrides. The one-atom-thick single-crystalline graphene provides an in-plane driving force to align all GaN domains to form a single crystal. The nucleation mechanisms and domain evolutions are further clarified by surface science exploration and first-principle calculations. This work lays the foundation for the integration of GaN-based devices into Si-based integrated circuits and also broadens the choice for the epitaxy of nitrides on unconventional amorphous or flexible substrates.
机译：在Si（100）衬底上制造与主流互补金属氧化物半导体电路兼容的基于单晶氮化镓（GaN）的器件是下一代高性能电子和光电产品的先决条件。但是，由于Si（100）的不对称表面域，单晶GaN在Si（100）衬底上的直接外延仍然具有挑战性，这会导致具有两域结构的多晶GaN。在此，通过利用单晶石墨烯作为缓冲层，对Si（100）基板上的单晶GaN膜的外延进行了说明。用NH3对石墨烯进行原位处理可以生成K（Klingon Empire）N键的sp（3）C符号，然后触发氮化物的成核作用。单原子厚的单晶石墨烯提供面内驱动力，以对准所有GaN域以形成单晶。表面科学探索和第一性原理计算进一步阐明了成核机理和畴演化。这项工作为将GaN基器件集成到Si基集成电路中奠定了基础，并且拓宽了非常规非晶或柔性衬底上氮化物外延的选择范围。

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