• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Facet Control for Trap-State Suppression in Colloidal Quantum Dot Solids
【24h】

Facet Control for Trap-State Suppression in Colloidal Quantum Dot Solids

机译：胶体量子点固体中陷阱状态抑制的小平面控制

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Trap states in colloidal quantum dot (QD) solids significantly affect the performance of QD solar cells, because they limit the open-circuit voltage and short circuit current. The {100} facets of PbS QDs are important origins of trap states due to their weak or missing passivation. However, previous investigations focused on synthesis, ligand exchange, or passivation approaches and ignored the control of {100} facets for a given dot size. Herein, trap states are suppressed from the source via facet control of PbS QDs. The {100} facets of approximate to 3 nm PbS QDs are minimized by tuning the balance between the growth kinetics and thermodynamics in the synthesis. The PbS QDs synthesized at a relatively low temperature with a high oversaturation follow a kinetics-dominated growth, producing nearly octahedral nanoparticles terminated mostly by {111} facets. In contrast, the PbS QDs synthesized at a relatively high temperature follow a thermodynamics-dominated growth. Thus, a spherical shape is preferred, producing truncated octahedral nanoparticles with more {100} facets. Compared to PbS QDs from thermodynamics-dominated growth, the PbS QDs with less {100} facets show fewer trap states in the QD solids, leading to a better photovoltaic device performance with a power conversion efficiency of 11.5%.
机译：胶体量子点（QD）固体中的陷阱状态显着影响QD太阳能电池的性能，因为它们限制了开路电压和短路电流。由于钝化或遗失缺失，PBS QD的{100} QD是陷阱状态的重要起源。然而，以前的研究专注于合成，配体交换或钝化方法，并忽略了给定点大小的{100}方面的控制。这里，通过PBS QD的面部控制从源抑制陷阱状态。通过在合成中调整生长动力学和热力学之间的平衡来最小化近似为3nm PBS QD的{100}刻面。在相对较低的温度下合成的PBS QD伴随着高倍率遵循动力学主导的生长，产生几乎八面体的纳米颗粒，主要由{111}小平面终止。相反，在相对较高的温度下合成的PBS QD遵循热力学占主导地位的生长。因此，优选球形形状，产生具有更多{100}小平面的截短的八面体纳米颗粒。与PBS QDS从热力学主导的增长相比，具有较少{100}小平面的PBS QDS显示QD固体中的陷阱状态较少，导致功率转换效率为11.5％的更好的光伏器件性能。

著录项

  • 来源
    《Advanced Functional Materials》 |2020年第22期|2000594.1-2000594.11|共11页
  • 作者

    Xia Yong; Chen Wei; Zhang Peng; Liu Sisi; Wang Kang; Yang Xiaokun; Tang Haodong; Lian Linyuan; He Jungang; Liu Xinxing; Liang Guijie; Tan Manlin; Gao Liang; Liu Huan; Song Haisheng; Zhang Daoli; Gao Jianbo; Wang Kai; Lan Xinzheng; Zhang Xiuwen; Mueller-Buschbaum Peter; Tang Jiang; Zhang Jianbing;

  • 作者单位

    Huazhong Univ Sci & Technol Sch Opt & Elect Informat 1037 Luoyu Rd Wuhan 430074 Hubei Peoples R China;

    Tech Univ Munich Phys Dept Lehrstuhl Funkt Mat James Franck Str 1 D-85748 Garching Germany|Southern Univ Sci & Technol Dept Elect & Elect Engn Xueyuan Blvd 1088 Shenzhen 518055 Peoples R China;

    Shenzhen Univ Coll Phys & Optoelect Engn Shenzhen 518060 Peoples R China;

    Huazhong Univ Sci & Technol Sch Opt & Elect Informat 1037 Luoyu Rd Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci & Technol Sch Opt & Elect Informat 1037 Luoyu Rd Wuhan 430074 Hubei Peoples R China|Southern Univ Sci & Technol Dept Elect & Elect Engn Xueyuan Blvd 1088 Shenzhen 518055 Peoples R China;

    Huazhong Univ Sci & Technol Wuhan Natl Lab Optoelect Wuhan 430074 Hubei Peoples R China;

    Southern Univ Sci & Technol Dept Elect & Elect Engn Xueyuan Blvd 1088 Shenzhen 518055 Peoples R China;

    Huazhong Univ Sci & Technol Sch Opt & Elect Informat 1037 Luoyu Rd Wuhan 430074 Hubei Peoples R China;

    Wuhan Inst Technol Sch Mat Sci & Engn Wuhan 430205 Hubei Peoples R China;

    Huazhong Univ Sci & Technol Wuhan Natl Lab Optoelect Wuhan 430074 Hubei Peoples R China;

    Hubei Univ Arts & Sci Hubei Key Lab Low Dimens Optoelect Mat & Devices Xiangyang 441053 Hubei Peoples R China;

    Tsinghua Univ Shenzhen Res Inst Shenzhen 518057 Guangdong Peoples R China;

    Huazhong Univ Sci & Technol Wuhan Natl Lab Optoelect Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci & Technol Sch Opt & Elect Informat 1037 Luoyu Rd Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci & Technol Wuhan Natl Lab Optoelect Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci & Technol Sch Opt & Elect Informat 1037 Luoyu Rd Wuhan 430074 Hubei Peoples R China;

    Clemson Univ Dept Phys & Astron Ultrafast Photophys Quantum Devices Clemson SC 29634 USA;

    Huazhong Univ Sci & Technol Sch Opt & Elect Informat 1037 Luoyu Rd Wuhan 430074 Hubei Peoples R China|Southern Univ Sci & Technol Dept Elect & Elect Engn Xueyuan Blvd 1088 Shenzhen 518055 Peoples R China;

    Huazhong Univ Sci & Technol Sch Opt & Elect Informat 1037 Luoyu Rd Wuhan 430074 Hubei Peoples R China;

    Shenzhen Univ Coll Phys & Optoelect Engn Shenzhen 518060 Peoples R China;

    Tech Univ Munich Phys Dept Lehrstuhl Funkt Mat James Franck Str 1 D-85748 Garching Germany|Tech Univ Munich Heinz Maier Leibnitz Zentrum MLZ Lichtenbergstr 1 D-85748 Garching Germany;

    Huazhong Univ Sci & Technol Wuhan Natl Lab Optoelect Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci & Technol Sch Opt & Elect Informat 1037 Luoyu Rd Wuhan 430074 Hubei Peoples R China|Huazhong Univ Sci & Technol Wuhan Natl Lab Optoelect Wuhan 430074 Hubei Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    facet control; quantum dots; solar cells; trap-state suppression;

    机译：面部控制;量子点;太阳能电池;陷阱状态抑制;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号