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首页> 外文期刊>Advanced Functional Materials >Systematic Design and Demonstration of Multi-Bit Generation in Layered Materials Heterostructures Floating-Gate Memory
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Systematic Design and Demonstration of Multi-Bit Generation in Layered Materials Heterostructures Floating-Gate Memory

机译：分层材料异质结构浮栅存储器中多比特生成的系统设计与演示

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摘要

Van der Waals (vdW) heterostructures with 2D materials have shown that atomically thin non-volatile memories are advantageous in terms of integration, while offering high performance and excellent stability. The non-volatile memory behavior of 2D materials has mainly been studied for single-bit operation, and there is growing interest in expanding to multi-bit operation to enhance the storage capacities of memory devices. However, the conditions or rules for generating the desired number of bits in 2D-based multi-bit memory remain to be identified. In this study, multiple bits are successfully created on non-volatile memory based on vdW heterostructure floating-gate memory (FGM) by systematically tuning the dimensions of the 2D materials. In particular, a fingerprint mechanism is established that links the bit number and dimensions of 2D crystals on vdW heterostructures. This approach could enable the precise generation of the desired number of bits in layered-material-based vdW FGMs.
机译：van der Waals（VDW）具有2D材料的异质结构表明，原子上薄的非易失性存储器在整合方面是有利的，同时提供高性能和优异的稳定性。 2D材料的非易失性存储器行为主要研究了单比特操作，并且对扩展到多位操作越来越感兴趣以增强存储器设备的存储容量。 然而，仍然识别用于在基于2D的多位存储器中产生所需比特数的条件或规则。 在该研究中，通过系统地调谐2D材料的尺寸，基于VDW异质结构浮栅存储器（FGM）在非易失性存储器上成功创建多个比特。 特别地，建立指纹机构，其将2D晶体的位数和尺寸与VDW异质结构上的尺寸和尺寸联系起来。 该方法可以在基于分层材料的VDW FGMS中精确产生所需的比特数。

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  • 来源
    《Advanced Functional Materials》 |2021年第43期|2105472.1-2105472.9|共9页
  • 作者

    Gwon Oh Hun; Kim Jong Yun; Kim Han Seul; Kang Seok-Ju; Byun Hye Ryung; Park Min; Lee Dong Su; Kim Yoon-jeong; Ahn Seokhoon; Kim Jaekyung; Cho Sang-Joon; Yu Young-Jun;

  • 作者单位

    Chungnam Natl Univ Dept Phys 99 Daehak Ro Daejeon 34134 South Korea;

    Chungnam Natl Univ Inst Quantum Syst 99 Daehak Ro Daejeon 34134 South Korea;

    Korea Inst Sci & Technol Informat Natl Inst Supercomp & Networking Ctr Supercomp Applicat Daejeon 34141 South Korea|Univ Sci & Technol UST Dept Data & High Performance Comp Sci Daejeon 34113 South Korea;

    Chungnam Natl Univ Inst Quantum Syst 99 Daehak Ro Daejeon 34134 South Korea;

    Chungnam Natl Univ Inst Quantum Syst 99 Daehak Ro Daejeon 34134 South Korea;

    Korea Inst Sci & Technol Inst Adv Composite Mat Wonju 565905 Jeollabuk Do South Korea;

    Korea Inst Sci & Technol Inst Adv Composite Mat Wonju 565905 Jeollabuk Do South Korea;

    Korea Inst Sci & Technol Inst Adv Composite Mat Wonju 565905 Jeollabuk Do South Korea|Hanyang Univ Dept Chem Seoul 04763 South Korea;

    Korea Inst Sci & Technol Inst Adv Composite Mat Wonju 565905 Jeollabuk Do South Korea;

    Pk Syst Corp 109 Gwanggyo Ro Suwon 16229 South Korea;

    Pk Syst Corp 109 Gwanggyo Ro Suwon 16229 South Korea;

    Chungnam Natl Univ Dept Phys 99 Daehak Ro Daejeon 34134 South Korea|Chungnam Natl Univ Inst Quantum Syst 99 Daehak Ro Daejeon 34134 South Korea;

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  • 正文语种 eng
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  • 关键词

    2D materials; floating gate memory; hBN thickness; multi-bit generation map; multi-bit memory;

    机译：2D材料;浮栅记忆;HBN厚度;多位生成图;多阱内存;

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