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Growth and Luminescence of Polytypic InP on Epitaxial Graphene

机译：外延石墨烯上多型InP的生长和发光

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摘要

Van der Waals epitaxy is an attractive alternative to direct heteroepitaxy where the forced coherency at the interface cannot sustain large differences in lattice parameters and thermal expansion coefficients between the substrate and the epilayer. Herein, the growth of monocrystalline InP on Ge and SiO2/Si substrates using graphene as an interfacial layer is demonstrated. Micrometer-sized InP crystals are found to grow with interfaces of high crystalline quality and with different degrees of coalescence depending on the growth conditions. Some InP crystals exhibit a polytypic structure, consisting of alternating zinc-blende and wurtzite phases, forming a type-II homojunction with well (barrier) width of about 10 nm. The optical properties, investigated using room temperature nano-cathodoluminescence, indicate the signatures of the direct optical transitions at 1.34 eV across the gap of the zinc-blende phase and the indirect transitions at approximate to 1.31 eV originating from the alternating zinc-blende and wurtzite phases. Additionally, the InP nanorods, found growing mainly on the graphene/SiO2/Si substrate, show optical transition across the gap of the wurtzite phase at approximate to 1.42 eV. This demonstration of InP growth on graphene and the correlative study between the structure and optical properties pave the way to develop hybrid structures for potential applications in integrated photonic and optoelectronic devices.
机译：Van der Waals外延是直接异质外延的一种有吸引力的替代方法，其中界面处的强制相干不能维持衬底和外延层之间晶格参数和热膨胀系数的较大差异。在此，说明了使用石墨烯作为界面层在Ge和SiO 2 / Si衬底上生长单晶InP。发现微米级InP晶体具有高晶体质量的界面，并且根据生长条件而具有不同的聚结程度。一些InP晶体表现出多型结构，由交替的闪锌矿和纤锌矿相组成，形成II型同质结，阱（势垒）宽度约为10 nm。使用室温纳米阴极发光法研究的光学性质表明，在1.34 eV处，穿过闪锌矿相隙的直接光学跃迁的特征，以及大约1.31 eV的间接跃迁源自交替的闪锌矿和纤锌矿。阶段。此外，发现主要在石墨烯/ SiO2 / Si衬底上生长的InP纳米棒在穿过纤锌矿相的间隙中大约1.42 eV处显示出光学跃迁。 InP在石墨烯上的生长证明以及结构与光学性质之间的相关研究为开发混合结构以在集成光子和光电器件中的潜在应用铺平了道路。

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