• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Advanced Functional Materials >Fully Transparent p-MoTe_2 2D Transistors Using Ultrathin MoO_x/Pt Contact Media for Indium-Tin-Oxide Source/Drain
【24h】

Fully Transparent p-MoTe_2 2D Transistors Using Ultrathin MoO_x/Pt Contact Media for Indium-Tin-Oxide Source/Drain

机译：使用超薄MoO_x / Pt接触介质的铟锡氧化物源极/漏极完全透明的p-MoTe_2 2D晶体管

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Since transition metal dichalcogenide (TMD) semiconductors are found as 2D van der Waals materials with a discrete energy bandgap, many 2D-like thin field effect transistors (FETs) and PN diodes are reported as prototype electrical and optoelectronic devices. As a potential application of display electronics, transparent 2D FET devices are also reported recently. Such transparent 2D FETs are very few in report, yet no p-type channel 2D-like FETs are seen. Here, 2D-like thin transparent p-channel MoTe2 FETs with oxygen (O-2) plasma-induced MoOx/Pt/indium-tin-oxide (ITO) contact are reported for the first time. For source/drain contact, 60 s short O-2 plasma and ultrathin Pt-deposition processes on MoTe2 surface are sequentially introduced before ITO thin film deposition and patterning. As a result, almost transparent 2D FETs are obtained with a decent mobility of approximate to 5 cm(2) V-1 s(-1), a high ON/OFF current ratio of approximate to 10(5), and 70% transmittance. In particular, for normal MoTe2 FETs without ITO, O-2 plasma process greatly improves the hole injection efficiency and device mobility (approximate to 60 cm(2) V-1 s(-1)), introducing ultrathin MoOx between Pt source/drain and MoTe2. As a final device application, a photovoltaic current modulator, where the transparent FET stably operates as gated by photovoltaic effects, is integrated.
机译：由于人们发现过渡金属二硫化氢（TMD）半导体是具有离散能带隙的2D van der Waals材料，因此许多类似2D的薄场效应晶体管（FET）和PN二极管被报道为电气和光电设备的原型。作为显示电子设备的潜在应用，最近还报道了透明2D FET器件。这样的透明2D FET在报告中很少，但是没有看到类似p型沟道2D的FET。在这里，首次报道了具有氧（O-2）等离子体诱导的MoOx / Pt /铟锡氧化物（ITO）接触的二维类薄透明p沟道MoTe2 FET。对于源极/漏极接触，在ITO薄膜沉积和图案化之前，先在MoTe2表面引入60 s短的O-2等离子体和超薄Pt沉积工艺。结果，获得了几乎透明的2D FET，其迁移率约为5 cm（2）V-1 s（-1），通/断电流比高，约为10（5），透射率约为70％ 。特别是，对于没有ITO的普通MoTe2 FET，O-2等离子体工艺极大地提高了空穴注入效率和器件迁移率（约60 cm（2）V-1 s（-1）），在Pt源极/漏极之间引入了超薄MoOx和MoTe2。作为最终的设备应用，集成了光伏电流调制器，其中透明FET在光伏效应的作用下稳定工作。

著录项

  • 来源
    《Advanced Functional Materials》 |2018年第39期|1801204.1-1801204.9|共9页
  • 作者

    Cho Yongjae; Park Ji Hoon; Kim Minju; Jeong Yeonsu; Ahn Jongtae; Kim Taeyoung; Choi Hyunyong; Yi Yeonjin; Im Seongil;

  • 作者单位

    Yonsei Univ, Inst Phys & Appl Phys, Van der Waals Mat Res Ctr, 50 Yonsei Ro, Seoul 03722, South Korea;

    Yonsei Univ, Inst Phys & Appl Phys, Van der Waals Mat Res Ctr, 50 Yonsei Ro, Seoul 03722, South Korea;

    Yonsei Univ, Inst Phys & Appl Phys, Van der Waals Mat Res Ctr, 50 Yonsei Ro, Seoul 03722, South Korea;

    Yonsei Univ, Inst Phys & Appl Phys, Van der Waals Mat Res Ctr, 50 Yonsei Ro, Seoul 03722, South Korea;

    Yonsei Univ, Inst Phys & Appl Phys, Van der Waals Mat Res Ctr, 50 Yonsei Ro, Seoul 03722, South Korea;

    Yonsei Univ, Sch Elect & Elect Engn, 50 Yonsei Ro, Seoul 03722, South Korea;

    Yonsei Univ, Sch Elect & Elect Engn, 50 Yonsei Ro, Seoul 03722, South Korea;

    Yonsei Univ, Inst Phys & Appl Phys, Van der Waals Mat Res Ctr, 50 Yonsei Ro, Seoul 03722, South Korea;

    Yonsei Univ, Inst Phys & Appl Phys, Van der Waals Mat Res Ctr, 50 Yonsei Ro, Seoul 03722, South Korea;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    contact resistance; hole injection layers; MoTe2; plasma-induced MoOx; transparent electronics;

    机译：接触电阻;空穴注入层;MoTe2;等离子体诱导的MoOx;透明电子学;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号