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首页> 外文期刊>Advanced Functional Materials >High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor
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High Performance Flexible Nonvolatile Memory Based on Vertical Organic Thin Film Transistor

机译：基于垂直有机薄膜晶体管的高性能柔性非易失性存储器

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摘要

Flexible floating-gate organic transistor memory (FGOTM) is a potential candidate for emerging memory technologies. Unfortunately, conventional planar FGOTM suffers from weak driving ability and insufficient mechanical flexibility, which limits its commercial application. In this work, a novel flexible vertical FGOTM (VFGOTM) is reported. Benefitting from new vertical architecture, VFGOTM provides ultrashort channel length to afford an extremely high current density. Meanwhile, VFGOTM devices exhibit excellent memory performance and outstanding retention property. The memory properties of VFGOTM devices are comparable or even better than traditional planar FGOTM and much better than the reported organic nonvolatile memory with vertical transistor structures. More importantly, organic nonvolatile memory with vertical transistor structures is investigated for the first time on a flexible substrate. The results show that VFGOTM architecture allows vertical current flow across the channel layer to effectively eliminate the effect of mechanical bending during current transport, which significantly improves the mechanical stability of the flexible VFGOTM. Hence, with a combination of excellent driving ability, memory performance, and mechanical stability, VFGOTM devices meet the practical requirements for high performance memory applications, which have great potential for the application in a wide range of flexible and wearable electronics.
机译：柔性浮栅有机晶体管存储器（FGOTM）是新兴存储器技术的潜在候选者。不幸的是，传统的平面FGOTM具有驱动能力弱和机械柔韧性不足的缺点，这限制了其商业应用。在这项工作中，报道了一种新颖的柔性垂直FGOTM（VFGOTM）。得益于新的垂直架构，VFGOTM提供超短的通道长度，以提供极高的电流密度。同时，VFGOTM器件具有出色的存储性能和出色的保留性能。 VFGOTM器件的存储特性与传统的平面FGOTM相当甚至更好，并且比报道的具有垂直晶体管结构的有机非易失性存储要好得多。更重要的是，首次在柔性基板上研究了具有垂直晶体管结构的有机非易失性存储器。结果表明，VFGOTM体系结构允许垂直电流流过沟道层，以有效消除电流传输过程中的机械弯曲影响，从而显着提高了柔性VFGOTM的机械稳定性。因此，结合了出色的驱动能力，存储性能和机械稳定性，VFGOTM器件可以满足高性能存储应用的实际要求，在各种柔性和可穿戴电子产品中具有巨大的应用潜力。

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  • 来源
    《Advanced Functional Materials》 |2017年第41期|1703541.1-1703541.9|共9页
  • 作者

    Hu Daobing; Wang Xiumei; Chen Huipeng; Guo Tailiang;

  • 作者单位

    Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Fujian, Peoples R China;

    Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Fujian, Peoples R China;

    Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Fujian, Peoples R China;

    Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Fujian, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    flexible memory; nonvolatile memory; thin film transistors; vertical transistors;

    机译：柔性存储器;非易失性存储器;薄膜晶体管;垂直晶体管;

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