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首页> 外文期刊>Applied Physics Letters >High-performance flexible organic thin-film transistor nonvolatile memory based on molecular floating-gate and pn-heterojunction channel layer
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High-performance flexible organic thin-film transistor nonvolatile memory based on molecular floating-gate and pn-heterojunction channel layer

机译：基于分子浮栅和pn异质结沟道层的高性能柔性有机薄膜晶体管非易失性存储器

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摘要

Flexible floating-gate structural organic thin-film transistor (FG-OTFT) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular floating-gate/tunneling (I-FG/T) layer and a pn-heterojunction channel layer. Semiconducting polymer poly(9,9-dioctylfluorene-co-benzothiadiazole) nanoparticles and insulating polymer polystyrene are used to build the I-FG/T layers by spin-coating their solution. The dependence of the memory performances on the structure of I-FG/T layers is researched. For achieving a large charge storage capacity, the pn-heterojunction channel, consisting of 2,9-didecyldinaphtho[2,3-b:2 ',3 '-f]thieno[3,2-b]thiophene and F16CuPc, is fabricated to provide both electrons and holes for injecting and trapping in the floating gate by overwriting the stored charges with an opposite polarity at the programming and erasing voltages, respectively. As an optimal result, a high performance flexible FG-OTFT NVM is achieved, with a large memory window of 21.6 V on average, a highly stable charge storage retention capability up to 10 years, and a highly reliable programming/erasing switching endurance over 200 cycles. The FG-OTFT NVM also exhibits an excellent mechanical bending durability with the memory performances maintaining well over 6000 bending cycles at a bending radius of 5.9 mm.
机译：基于集成的分子浮栅/隧穿（I-FG / T）层和pn异质结沟道层，展示了柔性浮栅结构有机薄膜晶体管（FG-OTFT）非易失性存储器（NVM）。半导体聚合物聚（9,9-二辛基芴-共-苯并噻二唑）纳米粒子和绝缘聚合物聚苯乙烯用于通过旋涂I-FG / T层的溶液来构建它们。研究了存储器性能对I-FG / T层结构的依赖性。为了实现大的电荷存储容量，制造了由2,9-二癸基萘并[2,3-b：2'，3'-f]噻吩并[3,2-b]噻吩和F16CuPc组成的pn异质结通道通过分别在编程和擦除电压下以相反的极性覆盖存储的电荷，从而提供电子和空穴，以便注入和俘获在浮栅中。作为最佳结果，可实现高性能，灵活的FG-OTFT NVM，平均21.6 V的大存储窗口，长达10年的高度稳定的电荷存储保持能力，以及超过200的高度可靠的编程/擦除开关耐久性周期。 FG-OTFT NVM还具有出色的机械弯曲耐久性，其记忆性能在5.9 mm的弯曲半径下可保持超过6000个弯曲周期。

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