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Direct Writing of Gallium-Indium Alloy for Stretchable Electronics

机译：可伸缩电子器件的镓铟合金直接书写

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摘要

In this paper, a direct writing method for gallium-indium alloys is presented. The relationships between nozzle inner diameter, standoff distance, flow rate, and the resulting trace geometry are demonstrated. The interaction between the gallium oxide layer and the substrate is critically important in understanding the printing behavior of the liquid metal. The difference between receding and advancing contact angles demonstrates that the adhesion of the oxide layer to the substrate surface is stronger than the wetting of the surface by the gallium-indium alloy. This further demonstrates why free-standing structures such as the traces described herein can be realized. In addition to the basic characterization of the direct writing process, a design algorithm that is generalizable to a range of trace geometries is developed. This method is applied to the fabrication of an elastomer-encapsulated strain gauge that displays an approximately linear behavior through 50% strain with a gauge factor of 1.5.
机译：本文提出了一种直接写入镓铟合金的方法。证明了喷嘴内径，支座距离，流速和所产生的迹线几何形状之间的关系。氧化镓层与基材之间的相互作用对于理解液态金属的印刷行为至关重要。后退和前进接触角之间的差异表明，氧化物层对基材表面的粘附力强于镓铟合金对表面的润湿作用。这进一步证明了为什么可以实现诸如本文所述的迹线的独立结构。除了直接写入过程的基本特征之外，还开发了可推广到多种迹线几何形状的设计算法。此方法适用于弹性体封装的应变仪的制造，该应变仪在应变系数为1.5的50％应变下显示出近似线性的行为。

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  • 来源
    《Advanced Functional Materials》 |2014年第23期|3501-3507|共7页
  • 作者

    J. William Boley; Edward L. White; George T.-C. Chiu; Rebecca K. Kramer;

  • 作者单位

    School of Mechanical Engineering Purdue University 585 Purdue Mall, West, Lafayette, IN 47907, USA;

    School of Mechanical Engineering Purdue University 585 Purdue Mall, West, Lafayette, IN 47907, USA;

    School of Mechanical Engineering Purdue University 585 Purdue Mall, West, Lafayette, IN 47907, USA;

    School of Mechanical Engineering Purdue University 585 Purdue Mall, West, Lafayette, IN 47907, USA;

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