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Spatial Mapping of Morphology and Electronic Properties of Air-Printed Pentacene Thin Films

机译：气印并五苯薄膜的形貌和电子特性的空间映射

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摘要

To accelerate the pace of materials discovery and application, comprehensive links need to be established between a material's structure, properties, and process conditions used to obtain the material and/or final application format. This work examines the dry printing of pentacene thin film transistor (TFT) channels by guard flow-enhanced organic vapor jet printing (GF-OVJP), a technique that enables direct, solvent-free, additive patterning of device-quality molecular semiconductors in air. Deposition in air entails non-trivial effects at the boundary between ambient surroundings and the gas jet carrying the semiconductor vapor that influence the morphology and properties of the resulting electronic devices. Synchrotron X-ray diffraction is employed, complemented by measurement of electronic properties of GF-OVJP deposited films in a TFT to reveal how the morphology and electronic properties of the films depend on thickness, location within the printed pattern, nozzle translation velocity, and other process parameters. The hole field-effect mobility of the printed pentacene film is linked quantitatively with its crystal-linity, as well as with extent of exposure to ambient air during deposition. The analysis can be extended to accurately predict the performance of devices deposited in air by GF-OVJP, which are demonstrated here for a planar, large area deposit.
机译：为了加快材料发现和应用的步伐，需要在材料的结构，特性和用于获得材料和/或最终应用格式的工艺条件之间建立全面的联系。这项工作研究了通过保护流增强的有机蒸气喷射印刷（GF-OVJP）对并五苯薄膜晶体管（TFT）通道的干式印刷，该技术可在空气中直接，无溶剂地对器件质量的分子半导体进行附加图案化。空气中的沉积会在周围环境与载有半导体蒸气的气体射流之间的边界处产生不平凡的影响，影响生成的电子设备的形态和性能。采用同步加速器X射线衍射，并辅以测量TFT中GF-OVJP沉积膜的电子性质，以揭示膜的形态和电子性质如何取决于厚度，印刷图案内的位置，喷嘴平移速度及其他工艺参数。并五苯薄膜的空穴场效应迁移率与其结晶度以及沉积过程中暴露于环境空气的程度定量相关。可以扩展该分析，以准确预测通过GF-OVJP沉积在空气中的设备的性能，此处对平面，大面积沉积物进行了演示。

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  • 来源
    《Advanced Functional Materials》 |2014年第25期|3907-3916|共10页
  • 作者

    Shaurjo Biswas; Yongsoo Yang; Christian M. Schlepuetz; Nadav Ceva; Randall L. Headrick; Ron Pindak; Roy Clarke; Max Shtein;

  • 作者单位

    Department of Materials Science and Engineering University of Michigan Ann Arbor, MI 48109, USA;

    Department of Physics University of Michigan Ann Arbor, MI 48109, USA;

    X-ray Science Division Argonne National Laboratory Argonne, IL 60439, USA;

    Department of Materials Science and Engineering University of Michigan Ann Arbor, MI 48109, USA;

    Department of Physics University of Vermont Burlington, VT 05405, USA;

    National Synchrotron Light Source Brookhaven National Laboratory Upton, NY 11973, USA;

    Department of Physics University of Michigan Ann Arbor, MI 48109, USA;

    Department of Materials Science and Engineering University of Michigan Ann Arbor, MI 48109, USA;

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