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首页> 外文期刊>Advanced Functional Materials >Enhancing Light Emission of Nanostructured Vertical Light-Emitting Diodes by Minimizing Total Internal Reflection
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Enhancing Light Emission of Nanostructured Vertical Light-Emitting Diodes by Minimizing Total Internal Reflection

机译：通过使全内反射最小化来增强纳米结构垂直发光二极管的发光

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摘要

Nanostructured vertical light-emitting diodes (V-LEDs) with a very dense forest of vertically aligned ZnO nanowires on the surface of N-face n-type GaN are reported with a dramatic improvement in light extraction efficiency (~3.0×). The structural transformation (i.e., dissociation of the surface nitrogen atoms) at the nanolevel by the UV radiation and Ozone treatments contributes significantly to the initial nucleation for the nanowires growth due to the interdiffusion of Zn into GaN, evident by the scanning photoemission microscopy (SPEM), high-resolution transmission electron microscopy (HR-TEM), and ultraviolet photoelectron spectroscopy (UPS) measurements. This enables the growth of densely aligned ZnO nanowires on N-face n-type GaN. This approach shows an extreme enhancement in light extraction efficiency (>2.8×) compared to flat V-LEDs, in good agreement with the simulation expectations (~3.01×) obtained from 3D finite-difference time-domain (FDTD) tools, explained by the wave-guiding effect. The further increase (～30%) in light extraction efficiency is also observed by optimized design of nanogeom-etry (i.e., MgO layer on ZnO nanorods).
机译：据报道，在N面n型GaN表面上具有密集排列的垂直排列的ZnO纳米线的纳米结构垂直发光二极管（V-LED），其光提取效率得到了显着提高（〜3.0倍）。紫外光和臭氧处理在纳米级进行的结构转变（即表面氮原子的解离）在很大程度上归因于Zn相互扩散进入GaN中，从而促进了纳米线生长的初始成核，这在扫描光发射显微镜（SPEM）中很明显），高分辨率透射电子显微镜（HR-TEM）和紫外光电子能谱（UPS）测量。这使得能够在N面n型GaN上生长致密排列的ZnO纳米线。与平板V-LED相比，此方法显示出极大的光提取效率（> 2.8倍），与从3D有限差分时域（FDTD）工具获得的仿真预期（〜3.01倍）很好地吻合，波导效应。通过优化纳米晶体的设计（即ZnO纳米棒上的MgO层），还可以观察到光提取效率的进一步提高（约30％）。

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  • 来源
    《Advanced Functional Materials》 |2012年第3期|p.632-639|共8页
  • 作者

    Byeong-Uk Ye; Buem Joon Kim; Yang Hee Song; Jun Ho Son; Hak ki Yu; Myung Hwa Kim; Jong-Lam Lee; Jeong Min Baik;

  • 作者单位

    School of Mechanical and Advanced Materials Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 689-798, Republic of Korea;

    Department of Materials Science and Engineering Division of Advanced Materials Science Pohang University of Science and Technology (POSTECH) Pohang, Gyeongbuk 790-784, Republic of Korea;

    Department of Materials Science and Engineering Division of Advanced Materials Science Pohang University of Science and Technology (POSTECH) Pohang, Gyeongbuk 790-784, Republic of Korea;

    Department of Materials Science and Engineering Division of Advanced Materials Science Pohang University of Science and Technology (POSTECH) Pohang, Gyeongbuk 790-784, Republic of Korea;

    Department of Materials Science and Engineering Division of Advanced Materials Science Pohang University of Science and Technology (POSTECH) Pohang, Gyeongbuk 790-784, Republic of Korea;

    Department of Chemistry & Nano Science Ewha Womans University Seoul, 120-750, Republic of Korea;

    Department of Materials Science and Engineering Division of Advanced Materials Science Pohang University of Science and Technology (POSTECH) Pohang, Gyeongbuk 790-784, Republic of Korea;

    School of Mechanical and Advanced Materials Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 689-798, Republic of Korea;

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