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首页> 外文期刊>Advanced Functional Materials >Highly Crystalline Soluble Acene Crystal Arrays for Organic Transistors: Mechanism of Crystal Growth During Dip-Coating
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Highly Crystalline Soluble Acene Crystal Arrays for Organic Transistors: Mechanism of Crystal Growth During Dip-Coating

机译：用于有机晶体管的高度结晶的可溶性并苯晶体阵列：浸涂过程中晶体生长的机理

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摘要

The preparation of uniform large-area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field of organic electronics, including organic field-effect transistors. Quantitative control over the drying speed during dip-coating permits optimization of the organic semiconductor film formation, although the kinetics of crystallization at the air-solution-substrate contact line are still not well understood. Here, we report the facile one-step growth of self-aligning, highly crystalline soluble acene crystal arrays that exhibit excellent field-effect mobilities (up to 1.5 cm V~(-1) s~(-1)) via an optimized dip-coating process. We discover that optimized acene crystals grew at a particular substrate lifting-rate in the presence of low boiling point solvents, such as dichloromethane (b.p. of 40.0 °C) or chloroform (b.p. of 60.4 °C). Variable-temperature dip-coating experiments using various solvents and lift rates are performed to elucidate the crystallization behavior. This bottom-up study of soluble acene crystal growth during dip-coating provides conditions under which one may obtain uniform organic semiconductor crystal arrays with high crystallinity and mobilities over large substrate areas, regardless of the substrate geometry (wafer substrates or cylinder-shaped substrates).
机译：具有优异载流子迁移率的均匀的大面积高结晶性有机半导体薄膜的制备仍然是有机电子领域的一个挑战，包括有机场效应晶体管。尽管仍未充分理解在溶液-基材接触线上的结晶动力学，但对浸涂期间干燥速度的定量控制可优化有机半导体膜的形成。在这里，我们报告了通过优化的倾角表现出优异的场效应迁移率（高达1.5 cm V〜（-1）s〜（-1））的自对准，高度结晶的可溶性并苯晶体阵列的一步式生长。 -涂布过程。我们发现，在低沸点溶剂（例如二氯甲烷（沸点为40.0°C）或氯仿（沸点为60.4°C））的存在下，优化的并苯晶体以特定的底物提升速率生长。使用各种溶剂和提升速率进行可变温度浸涂实验，以阐明结晶行为。这项对浸涂过程中并苯晶体生长的自下而上的研究提供了一种条件，在此条件下，无论基板的几何形状（晶圆基板或圆柱状基板）如何，都可以获得在大基板区域上具有高结晶度和迁移率的均匀有机半导体晶体阵列。

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  • 来源
    《Advanced Functional Materials》 |2012年第5期|p.1005-1014|共10页
  • 作者

    JaeyoungJang; Sooji Nam; Kyuhyun Im; Jaehyun Hur; Seung Nam Cha; Jineun Kim; Hyung Bin Son; Hwansoo Suh; Marsha A. Loth; John E. Anthony; Jong-Jin Park; Chan Eon Park; Jong Min Kim; Kinam Kim;

  • 作者单位

    Samsung Advanced Institute of Technology (SAIT) Yongin, 449-712, Rep. Korea,Polymer Research Institute Department of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang, 790-784, Rep. Korea;

    Samsung Advanced Institute of Technology (SAIT) Yongin, 449-712, Rep. Korea,Polymer Research Institute Department of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang, 790-784, Rep. Korea;

    Samsung Advanced Institute of Technology (SAIT) Yongin, 449-712, Rep. Korea;

    Samsung Advanced Institute of Technology (SAIT) Yongin, 449-712, Rep. Korea;

    Samsung Advanced Institute of Technology (SAIT) Yongin, 449-712, Rep. Korea;

    Samsung Advanced Institute of Technology (SAIT) Yongin, 449-712, Rep. Korea;

    Samsung Advanced Institute of Technology (SAIT) Yongin, 449-712, Rep. Korea;

    Samsung Advanced Institute of Technology (SAIT) Yongin, 449-712, Rep. Korea;

    Department of Chemistry University of Kentucky Lexington, Kentucky, 40506, USA;

    Department of Chemistry University of Kentucky Lexington, Kentucky, 40506, USA;

    Samsung Advanced Institute of Technology (SAIT) Yongin, 449-712, Rep. Korea;

    Samsung Advanced Institute of Technology (SAIT) Yongin, 449-712, Rep. Korea,Polymer Research Institute Department of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang, 790-784, Rep. Korea;

    Samsung Advanced Institute of Technology (SAIT) Yongin, 449-712, Rep. Korea;

    Samsung Advanced Institute of Technology (SAIT) Yongin, 449-712, Rep. Korea;

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