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Self Encapsulated Poly(3-hexylthiophene)-poly(fluorinated alkyl methacrylate) Rod-Coil Block Copolymers with High Field Effect Mobilities on Bare SiO_2

机译:在裸露SiO_2上具有高场效应迁移率的自封装聚(3-己基噻吩)-聚(甲基丙烯酸氟代烷基酯)棒-油嵌段共聚物

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摘要

Conjugated rod-coil block copolymers provide an interesting route towards enhancing the properties of the conjugated block due to self-assembly and the interplay of rod-rod and rod-coil interactions. Here, we demonstrate the ability of an attached semi-fluorinated block to significantly improve upon the charge carrier properties of regioregular poly(3-hexyl thiophene) (rr-P3HT) materials on bare SiO_2. The thin film hole mobilities on bare SiO_2 dielectric surfaces of poly (3-hexyl thiophene)-block-polyfluoromethacrylates (P3HT-b-PFMAs) can approach up to 0.12 cm~2 V~(-1) s~(-1) with only 33 wt% of the P3HT block incorporated in the copolymer, as compared to rr-P3HT alone which typically has mobilities averaging 0.03 cm~2 V~(-1) s~(-1) To our knowledge, this is the highest mobility reported in literature for block copolymers containing a P3HT. More importantly, these high hole mobilities are achieved without multistep OTS treatments, argon protection, or post-annealing conditions. Crazing incidence wide-angle x-ray scattering (GIWAX) data revealed that in the P3HT-b-PFMA copolymers, the P3HT rod block self-assembles into highly ordered lamellar structures, similar to that of the rr-P3HT homopolymer. Crazing incidence small-angle x-ray scattering (CISAXS) data revealed that lamellar structures are only observed in perpendicular direction with short PFMA blocks, while lamellae in both perpendicular and parallel directions are observed in polymers with longer PFMA blocks. AFM, GIWAXS, and contact angle measurements also indicate that PFMA block assembles at the polymer thin film surface and forms an encapsulation layer. The high charge carrier mobilities and the hydrophobic surface of the block copolymer films clearly demonstrates the influence of the coil block segment on device performance by balancing the crystallization and microphase separation in the bulk morphological structure.
机译:共轭的杆-线圈嵌段共聚物由于自组装以及杆-杆和杆-线圈相互作用的相互作用,提供了增强共轭嵌段性能的有趣途径。在这里,我们证明了附着的半氟化嵌段能够显着改善裸露SiO_2上的区域规则聚(3-己基噻吩)(rr-P3HT)材料的载流子性能。聚(3-己基噻吩)-嵌段-聚氟甲基丙烯酸酯(P3HT-b-PFMAs)在SiO_2裸露电介质表面上的薄膜空穴迁移率可达到0.12 cm〜2 V〜(-1)s〜(-1)与通常具有平均0.03 cm〜2 V〜(-1)s〜(-1)的平均迁移率的rr-P3HT相比,共聚物中掺入的P3HT嵌段仅占33 wt%文献报道了含P3HT的嵌段共聚物。更重要的是,这些高空穴迁移率无需多步OTS处理,氩气保护或后退火条件即可实现。裂纹入射的广角X射线散射(GIWAX)数据表明,在P3HT-b-PFMA共聚物中,P3HT嵌段嵌段自组装成高度有序的层状结构,类似于rr-P3HT均聚物。裂纹入射小角X射线散射(CISAXS)数据显示,只有短PFMA嵌段在垂直方向才能观察到层状结构,而长PFMA嵌段的聚合物只能在垂直和平行方向观察到层状结构。 AFM,GIWAXS和接触角测量也表明PFMA嵌段在聚合物薄膜表面组装并形成包封层。嵌段共聚物薄膜的高电荷载流子迁移率和疏水性表面通过平衡本体形态结构中的结晶和微相分离,清楚地证明了线圈嵌段链段对器件性能的影响。

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  • 来源
    《Advanced Functional Materials》 |2012年第5期|p.1024-1032|共9页
  • 作者单位

    Dept. of Chemistry Carnegie Mellon University 4400 Fifth Avenue, Pittsburgh, PA 15213, USA;

    Dept. of Chemistry Carnegie Mellon University 4400 Fifth Avenue, Pittsburgh, PA 15213, USA;

    Dept. of Chemistry Carnegie Mellon University 4400 Fifth Avenue, Pittsburgh, PA 15213, USA;

    Dept. of Chemistry Carnegie Mellon University 4400 Fifth Avenue, Pittsburgh, PA 15213, USA;

    Dept. of Chemistry Carnegie Mellon University 4400 Fifth Avenue, Pittsburgh, PA 15213, USA;

    Dept. of Chemistry Carnegie Mellon University 4400 Fifth Avenue, Pittsburgh, PA 15213, USA;

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