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首页> 外文期刊>Advanced Functional Materials >Subpicosecond Domain Switching in Discrete Regions of Pb(Zr_(0.35)Ti_(0.65))O_3 Thick Films
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Subpicosecond Domain Switching in Discrete Regions of Pb(Zr_(0.35)Ti_(0.65))O_3 Thick Films

机译：Pb（Zr_（0.35）Ti_（0.65））O_3厚膜离散区域中的亚皮秒域转换

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摘要

The time dependence of the domain switching current density,J_(sw)(t), under pulsed voltages on a ferroelectric parallel-plate capacitor is the consequence of region-by-region polarization reversals across the film. As the distributive coercive voltage of domain nucleation increases from zero to the maximum applied voltage during the capacitor charging time, J_(sw)(t) is proportional to the domain switching speed at each time. By transforming the spatially inhomogeneous domain nucleation distribution into a temporal distribution of coercive fields (E_c), a local InJ_(sw) versus E_c~(-1) plot is derived for each domain, following the Merz equation. This provides insight into the independent domain switching dynamics at different nucleation sites in Pb(Zr_(0.35)Ti_(0.65)) O_3 thick films over a large current range. Although the activation field of the slope of the InJ_(sw)(t) versus E_c~(-1) plot varies with film area and temperature, all the plots extrapolate to a single point (J_0, E_0) from which the ultimate domain switching current density of J_0 =1.4 x 10~8 A cm~(-2) at the highest field of E_0 = 0.20-0.25 MV cm"1 is derived. Unexpectedly,J_0 and E_0 are independent of the film thickness and area, after correction for a small interfacial-layer effect. This analysis provides rigorous evidence for nucleation rate-limited domain switching with a subpicosecond nucleation time and the relative unimportance of domain forward-growth time across film thicknesses between 0.14 and 2 μm. This work paves the way to improve the efficiency of ferroelectric thick-film functionality in electronic and optoelectronic devices with ultrafast clock rates.
机译：在铁电平行板电容器上的脉冲电压下，域开关电流密度J_（sw）（t）的时间依赖性是整个膜上逐区域极化反转的结果。随着在电容器充电期间畴核的分布矫顽电压从零增加到最大施加电压，J_（sw）（t）与每次的畴切换速度成正比。通过将空间上不均匀的域成核分布转换为矫顽场（E_c）的时间分布，遵循Merz方程，为每个域导出了局部InJ_（sw）与E_c〜（-1）图。这提供了在大电流范围内Pb（Zr_（0.35）Ti_（0.65））O_3厚膜中不同成核位置的独立畴切换动力学的见解。尽管InJ_（sw）（t）的斜率的激活场与E_c〜（-1）的斜率的激活场随膜面积和温度而变化，但所有图均外推到单个点（J_0，E_0），最终域切换从该点开始得出在E_0 = 0.20-0.25 MV cm“”的最高场处的J_0 = 1.4 x 10〜8 A cm〜（-2）的电流密度。出乎意料的是，校正后，J_0和E_0与膜厚和面积无关该分析为使用亚皮秒成核时间的成核速率受限的畴转换提供了严格的证据，并且跨膜厚度在0.14和2μm之间的畴正向生长时间相对不重要，这项工作为达到以下目的铺平了道路。以超快的时钟速率提高电子和光电设备中铁电厚膜功能的效率。

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  • 来源
    《Advanced Functional Materials》 |2012年第10期|p.2148-2153|共6页
  • 作者

    An Quan Jiang; Zhi Hui Chen; Wen Yuan Hui; Dongping Wu; James F. Scott;

  • 作者单位

    State Key Laboratory of ASIC & System Department of Microelectronics Fudan University Shanghai, 200433, China;

    State Key Laboratory of ASIC & System Department of Microelectronics Fudan University Shanghai, 200433, China;

    State Key Laboratory of ASIC & System Department of Microelectronics Fudan University Shanghai, 200433, China;

    State Key Laboratory of ASIC & System Department of Microelectronics Fudan University Shanghai, 200433, China;

    Department of Physics University of Cambridge Cambridge CB3 0HE, UK;

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