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Microstructures of YSZ and CGO Thin Films Deposited by Spray Pyrolysis: Influence of Processing Parameters on the Porosity

机译:喷雾热解沉积YSZ和CGO薄膜的微观结构:工艺参数对孔隙率的影响

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摘要

Microstructures of yttria-stabilized zirconia (YSZ) thin films deposited by spray pyrolysis at 370 ℃ on sapphire are investigated. The as-deposited films are predominantly amorphous and crystallize upon heating at temperatures above 370 ℃, developing grains in the range of 5 nm to several 100 nm. During post-deposition heat treatment up to 800 ℃, ~ 50 vol% porosity develops in the center of the films with gradients towards almost dense interfaces to the air and substrate. The reason for this porosity is the decomposition of residues from the precursor and the free volume liberated due to crystallization. Dense YSZ thin films consisting of one monolayer of grains are obtained with annealing temperatures exceeding 1200 ℃. In gadolinium-doped-ceria (CGO) thin films similar microstructures and porosity are found after low-temperature heat treatments indicating that the precursor residues due to the deposition method are the main cause of the porosity. Grain growth stagnation in annealed thin films is observed in both the YSZ and in CGO thin films. Stagnating grain growth in the thin films is rather caused by reduced grain boundary mobility, here predominately due to a "secondary phase", i.e., pores, than to other effects. The stagnation ceases at higher annealing temperatures after densification has taken place.
机译:研究了在蓝宝石上370℃热喷雾沉积的氧化钇稳定氧化锆(YSZ)薄膜的微观结构。沉积后的薄膜主要是非晶态的,在370℃以上的温度下加热时会结晶,从而在5 nm至100 nm的范围内形成晶粒。在最高800℃的沉积后热处理期间,薄膜的中心会形成约50 vol%的孔隙率,且与空气和基材的界面几乎呈致密梯度。该孔隙率的原因是来自前体的残留物的分解以及由于结晶而释放的自由体积。在退火温度超过1200℃的条件下,获得了由单层晶粒组成的致密YSZ薄膜。在do掺杂二氧化铈(CGO)薄膜中,经过低温热处理后发现相似的微观结构和孔隙率,这表明由沉积方法导致的前驱物残留是孔隙率的主要原因。在YSZ和CGO薄膜中均观察到退火薄膜中的晶粒生长停滞。薄膜中的晶粒生长停滞是由晶界迁移率降低引起的,这在这里主要是由于“第二相”,即孔,而不是其他作用。致密化之后,在较高的退火温度下停止停滞。

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  • 来源
    《Advanced Functional Materials》 |2012年第16期|p.3509-3518|共10页
  • 作者单位

    Nonmetallic Inorganic Materials ETH Zurich, Wolfgang-Pauli-Str.10, CH-8093 Zurich, Switzerland;

    Nonmetallic Inorganic Materials ETH Zurich, Wolfgang-Pauli-Str.10, CH-8093 Zurich, Switzerland;

    Nonmetallic Inorganic Materials ETH Zurich, Wolfgang-Pauli-Str.10, CH-8093 Zurich, Switzerland;

    Nonmetallic Inorganic Materials ETH Zurich, Wolfgang-Pauli-Str.10, CH-8093 Zurich, Switzerland;

    Nonmetallic Inorganic Materials ETH Zurich, Wolfgang-Pauli-Str.10, CH-8093 Zurich, Switzerland;

    Nonmetallic Inorganic Materials ETH Zurich, Wolfgang-Pauli-Str.10, CH-8093 Zurich, Switzerland;

    Nonmetallic Inorganic Materials ETH Zurich, Wolfgang-Pauli-Str.10, CH-8093 Zurich, Switzerland;

    Nonmetallic Inorganic Materials ETH Zurich, Wolfgang-Pauli-Str.10, CH-8093 Zurich, Switzerland;

    Nonmetallic Inorganic Materials ETH Zurich, Wolfgang-Pauli-Str.10, CH-8093 Zurich, Switzerland;

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