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Functionalized Self-Assembled InAs/GaAs Quantum-Dot Structures Hybridized with Organic Molecules

机译:功能化的自组装InAs / GaAs量子点结构与有机分子杂交

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摘要

Low-dimensional III-V semiconductors have many advantages over other semiconductors; however, they are not particularly stable under physiological conditions. Hybridizing biocompatible organic molecules with advanced optical and electronic semiconductor devices based on quantum dots (QDs) and quantum wires could provide an efficient solution to realize stress-free and nontoxic interlaces to attach larger functional biomolecules. Monitoring the modifications of the optical properties of the hybrid molecule-QD systems by grafting various types of air-stable diazonium salts onto the QD structures surfaces provides a direct approach to prove the above concepts. The InAs/GaAs QD structures used in this work consist of a layer of surface In As QDs and a layer of buried In As QDs embedded in a wider-bandgap GaAs matrix. An enhancement in photoluminescence intensity by a factor of 3.3 from the buried QDs is achieved owing to the efficient elimination of the dangling bonds on the surface of the structures and to the decrease in non-radiative recombination caused by their surface states. Furthermore, a narrow photoluminescence band peaking at 1620 nm with a linewidth of 49 meV corresponding to the eigenstates interband transition of the surface In As QDs is for the first time clearly observed at room temperature, which is something that has rarely been achieved without the use of such engineered surfaces. The experimental results demonstrate that the hybrid molecule-QD systems possess a high stability, and both the surface and buried QDs are very sensitive to changes in their surficial conditions, indicating that they are excellent candidates as basic sensing elements for novel biosensor applications.
机译:低维III-V半导体相对于其他半导体具有许多优势。然而,它们在生理条件下不是特别稳定。将生物相容性有机分子与基于量子点(QD)和量子线的先进光学和电子半导体器件进行杂交,可以提供一种有效的解决方案,以实现无应力且无毒的隔行扫描,以附着更大的功能性生物分子。通过将各种类型的空气稳定重氮盐接枝到QD结构表面上来监测杂化分子QD系统光学性质的变化,提供了一种证明上述概念的直接方法。这项工作中使用的InAs / GaAs QD结构由一层表面In As QD和一层埋入In As QD组成,这些QD嵌入在宽带隙GaAs矩阵中。由于有效消除了结构表面上的悬空键,以及由于其表面状态引起的非辐射重组的减少,因此掩埋的量子点的光致发光强度提高了3.3倍。此外,首次在室温下首次观察到窄的光致发光带,其峰宽在1620 nm处,线宽为49 meV,对应于表面In As QDs的本征态带间跃迁,这是在没有使用的情况下很少实现的这样的工程表面。实验结果表明,杂化分子-量子点系统具有很高的稳定性,表面和埋藏的量子点对表面条件的变化都非常敏感,表明它们是新型生物传感器应用的基本传感元件的极佳候选者。

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  • 来源
    《Advanced Functional Materials》 |2010年第3期|469-475|共7页
  • 作者单位

    Department of Chemistry Department of Mechanical Engineering and Materials Science Department of Computer Science and the Smalley Institute for Nanoscale Science and Technology Rice University MS 222, 6100 Main St., Houston, TX 77005 (USA) Department of Micro- and Nano-technology, Technical University of Denmark, ?rsteds Plads, 2800 Kgs. Lyngby (Denmark);

    Department of Chemistry Department of Mechanical Engineering and Materials Science Department of Computer Science and the Smalley Institute for Nanoscale Science and Technology Rice University MS 222, 6100 Main St., Houston, TX 77005 (USA);

    Department of Chemistry Department of Mechanical Engineering and Materials Science Department of Computer Science and the Smalley Institute for Nanoscale Science and Technology Rice University MS 222, 6100 Main St., Houston, TX 77005 (USA);

    Department of Chemistry Department of Mechanical Engineering and Materials Science Department of Computer Science and the Smalley Institute for Nanoscale Science and Technology Rice University MS 222, 6100 Main St., Houston, TX 77005 (USA);

    Department of Chemistry Department of Mechanical Engineering and Materials Science Department of Computer Science and the Smalley Institute for Nanoscale Science and Technology Rice University MS 222, 6100 Main St., Houston, TX 77005 (USA);

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