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首页> 外文期刊>Advanced Functional Materials >Ultralow Dielectric Constant Tetravinyltetramethylcyclotetrasiloxane Films Deposited by Initiated Chemical Vapor Deposition (iCVD)
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Ultralow Dielectric Constant Tetravinyltetramethylcyclotetrasiloxane Films Deposited by Initiated Chemical Vapor Deposition (iCVD)

机译：通过启动化学气相沉积（iCVD）沉积的超低介电常数四乙烯基四甲基环四硅氧烷薄膜

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摘要

Simultaneous improvement of mechanical properties and lowering of the dielectric constant occur when films grown from the cyclic monomer tetravinyltetramethylcyclotetrasiloxane (V4D4) via initiated chemical vapor deposition (iCVD) are thermally cured in air. Clear signatures from silsesquioxane cage structures in the annealed films appear in the Fourier transform IR (1140 cm~(-1)) and Raman (1117 cm~(-1)) spectra. The iCVD method consumes an order of magnitude lower power density than the traditional plasma-enhanced CVD, thus preserving the precursor's delicate ring structure and organic substituents in the as-deposited films. The high degree of structural retention in the as-deposited film allows for the beneficial formation of intrinsically porous siisesquioxane cages upon annealing in air. Complete oxidation of the silicon creates 'Q' groups, which impart greater hardness and modulus to the films by increasing the average connectivity number of the film matrix beyond the percolation of rigidity. The removal of labile hydrocarbon moieties allows for the oxidation of the as-deposited film while simultaneously inducing porosity. This combination of events avoids the typical trade-off between improved mechanical properties and higher dielectric constants. Films annealed at 410℃ have a dielectric constant of 2.15, and a hardness and modulus of 0.78 and 5.4 GPa, respectively. The solvent-less and low-energy nature of iCVD make it attractive from an environmental safety and health perspective.
机译：当由环状单体四乙烯基四甲基环四硅氧烷（V4D4）通过引发的化学气相沉积（iCVD）生成的薄膜在空气中热固化时，会同时实现机械性能的改善和介电常数的降低。退火膜中倍半硅氧烷笼结构的清晰特征出现在傅立叶变换红外光谱（1140 cm〜（-1））和拉曼光谱（1117 cm〜（-1））中。与传统的等离子增强CVD相比，iCVD方法消耗的功率密度低一个数量级，从而在沉积的薄膜中保留了前驱体的精细环结构和有机取代基。在沉积的薄膜中高度的结构保持力允许在空气中退火时有益地形成本征多孔的倍半硅氧烷笼。硅的完全氧化产生“ Q”基团，通过增加薄膜基质的平均连接数（超过刚性），赋予薄膜更大的硬度和模量。除去不稳定的烃部分允许沉积的膜氧化，同时引起孔隙率。这些事件的组合避免了机械性能提高和介电常数提高之间的典型权衡。在410℃退火的薄膜的介电常数为2.15，硬度和模量分别为0.78和5.4 GPa。从环境安全和健康的角度来看，iCVD的无溶剂和低能耗特性使其具有吸引力。

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  • 来源
    《Advanced Functional Materials》 |2010年第4期|607-616|共10页
  • 作者

    Nathan J. Trujillo; Qingguo Wu; Karen K. Gleason;

  • 作者单位

    Department of Chemical Engineering Massachusetts Institute of Technology 77 Massachusetts Avenue, Cambridge, MA 02139 (USA);

    PECVD Business Unit Novellus Systems Inc. 11155 SW Leveton Drive, Tualatin, OR 97062 (USA);

    Department of Chemical Engineering Massachusetts Institute of Technology 77 Massachusetts Avenue, Cambridge, MA 02139 (USA);

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