Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation

Dajun Yuan; Rui Cuo; Yaguang Wei; Wenzhuo Wu; Yong Ding; Zhong Lin Wang; Suman Das

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Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation

机译：使用激光干涉烧蚀在GaN上垂直排列和周期性分布的ZnO纳米线的异质外延图案生长

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A simple two-step method of fabricating vertically aligned and periodically distributed ZnO nanowires on gallium nitride (GaN) substrates is described. The method combines laser interference ablation (LIA) and low temperature hydrothermal decomposition. The ZnO nanowires grow heteroepitaxially on unablated regions of GaN over areas spanning 1 cm2, with a high degree of control over size, orientation, uniformity, and periodicity. High resolution transmission electron microscopy and scanning electron microscopy are utilized to study the structural characteristics of the LIA-patterned GaN substrate in detail. These studies reveal the possible mechanism for the preferential, site-selective growth of the ZnO nanowires. The method demonstrates high application potential for wafer-scale integration into sensor arrays, piezoelectric devices, and optoelectronic devices.

机译：描述了一种在氮化镓（GaN）衬底上制造垂直排列且周期性分布的ZnO纳米线的简单两步方法。该方法结合了激光干涉烧蚀（LIA）和低温水热分解。 ZnO纳米线在1 cm2的面积上在GaN的未烧蚀区域上异质外延生长，对尺寸，方向，均匀性和周期性具有高度的控制。利用高分辨率透射电子显微镜和扫描电子显微镜详细研究了LIA图案化GaN衬底的结构特征。这些研究揭示了ZnO纳米线优先，定点生长的可能机制。该方法证明了将晶片规模集成到传感器阵列，压电器件和光电器件中的巨大应用潜力。

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《Advanced Materials for Optics and Electronics》 |2010年第20期|p.3484-3489|共6页
作者
Dajun Yuan; Rui Cuo; Yaguang Wei; Wenzhuo Wu; Yong Ding; Zhong Lin Wang; Suman Das;
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Woodruff School of Mechanical Engineering Georgia Institute of Technology Atlanta, GA 30332-0405, USA;

rnWoodruff School of Mechanical Engineering Georgia Institute of Technology Atlanta, GA 30332-0405, USA;

rnSchool of Materials Science and Engineering Georgia Institute ofTechnology Atlanta, GA 30332-0245, USA;

rnSchool of Materials Science and Engineering Georgia Institute ofTechnology Atlanta, GA 30332-0245, USA;

rnSchool of Materials Science and Engineering Georgia Institute ofTechnology Atlanta, GA 30332-0245, USA;

rnSchool of Materials Science and Engineering Georgia Institute ofTechnology Atlanta, GA 30332-0245, USA;

rnWoodruff School of Mechanical Engineering Georgia Institute of Technology Atlanta, GA 30332-0405, USA;

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1. The fabrication of vertically aligned and periodically distributed carbon nanotube bundles and periodically porous carbon nanotube films through a combination of laser interference ablation and metal-catalyzed chemical vapor deposition [J] . Yuan D., Lin W., Guo R., Nanotechnology . 2012,第21期

机译：通过激光干涉烧蚀和金属催化化学气相沉积的组合制备垂直排列并周期性分布的碳纳米管束和周期性多孔的碳纳米管膜
2. Patterned growth of aligned ZnO nanowire arrays on sapphire and GaN layers [J] . H.J. Fan, F. Fleischer, W. Lee, Superlattices and microstructures . 2004,第1a3期

机译：蓝宝石和GaN层上对准的ZnO纳米线阵列的图案生长
3. Patterned Growth Of Vertically Aligned Zno Nanowire Arrays On Inorganic Substrates At Low Temperature Without Catalyst [J] . Sheng Xu, Yaguang Wei, Melanie Kirkham, Journal of the American Chemical Society . 2008,第45期

机译：在没有催化剂的情况下，无机衬底上垂直排列的Zno纳米线阵列的图案化生长
4. ALIGNED GROWTH OF ZNO NANOWIRES BY LASER ABLATION AND THEIR APPLICATIONS [C] . Tatsuo Okada, Ruiqian Guo, Jun Nishimura, 3rd Pacific international conference on applications of lasers and optics 2008 (PICALO 2008) . 2008

机译：激光烧蚀法制备ZNO纳米线及其应用
5. Heteroepitaxial Thick GaN Layers and Vertical High-Power Devices by Selective Area MOCVD Growth [D] . Tanaka, Atsunori. 2019

机译：通过选择性地区MOCVD生长的异膜厚GaN层和垂直大功率器件
6. Nucleation control for the growth of vertically aligned GaN nanowires [O] . Wen-Chi Hou, Tung-Hsien Wu, Wei-Che Tang, 2012

机译：垂直取向GaN纳米线生长的成核控制
7. Patterned Growth of Vertically Aligned ZnO Nanowire Arrays on Inorganic Substrates at Low Temperature without Catalyst [O] . Xu, Sheng, Wei, Yaguang, Kirkham, Melanie, 2008

机译：在没有催化剂的情况下无机衬底上垂直排列的ZnO纳米线阵列的图案化生长
8. Growth of Vertically Aligned ZnO Nanowire Arrays Using Bilayered Metal Catalysts. [R] . E. R. Glaser H. Qi J. D. Caldwell S. M. Prokes 2012

机译：双层金属催化剂生长垂直排列的ZnO纳米线阵列。

Heteroepitaxial Patterned Growth of Vertically Aligned and Periodically Distributed ZnO Nanowires on GaN Using Laser Interference Ablation

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