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首页> 外文期刊>Advanced Functional Materials >An organic thin-film transistor with a photoinitiator-free photosensitive polyimide as gate insulator
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An organic thin-film transistor with a photoinitiator-free photosensitive polyimide as gate insulator

机译：以无光引发剂的光敏聚酰亚胺为栅极绝缘体的有机薄膜晶体管

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摘要

This investigation deals with the synthesis and detailed study of a photoinitiator-free photosensitive polyimide gate insulator for organic thin-film transistors (OTFTs), one of the most important components of active-matrix displays on plastic substrates. The photosensitive polyimide precursor poly(amic acid) is prepared from the aromatic dianhydride 3,3',4,4'-benzophenone tetracarboxylic dianhydride (BTDA) and the novel aromatic diamine 7-(3,5-diaminobenzoyloxy)coumarine (DACM). The photosensitivity of the poly(amic acid) film is investigated using a high-pressure mercury lamp at 280-31.0 run. The pattern resolution of the photocured film was about 50 mu m. The surface morphology of the films before and after the photopatterning process is also investigated. In addition, we have fabricated pentacene OTFTs with the photoinitiator-free photosensitive polyimide as gate insulator. The OTFT characteristics are discussed in more detail with respect to the electrical properties of the photosensitive polyimide thin film.
机译：这项研究涉及有机薄膜晶体管（OTFT）的无光引发剂光敏聚酰亚胺栅极绝缘体的合成和详细研究，该薄膜是塑料基板上有源矩阵显示器的最重要组成部分。由芳族二酐3,3'，4,4'-二苯甲酮四羧酸二酐（BTDA）和新型芳族二胺7-（3,5-二氨基苯甲酰氧基）香豆碱（DACM）制备光敏性聚酰亚胺前体聚（酰胺酸）。使用高压汞灯在280-31.0运行下研究了聚（酰胺酸）薄膜的光敏性。光固化膜的图案分辨率为约50μm。还研究了在光图案化之前和之后的膜的表面形态。另外，我们用不含光引发剂的光敏聚酰亚胺作为栅绝缘体，制备并五苯OTFT。关于光敏性聚酰亚胺薄膜的电特性，更详细地讨论了OTFT特性。

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