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Ga-Doped ZnS Nanowires as Precursors for ZnO/ZnGa_2O_4 Nanotubes

机译:Ga掺杂的ZnS纳米线作为ZnO / ZnGa_2O_4纳米管的前体

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摘要

Semiconductor nanowires and nanotubes are attractive candidates as active elements for the next generation of nanoscale devices because of their many novel or enhanced properties that may be of importance to many areas of technology.The integration of nanostructures in devices requires the careful and rational control of key nanomaterial characteristics such as the chemical composition, shape, size, interfaces, and doping.
机译:半导体纳米线和纳米管具有许多新颖或增强的特性,对于下一代纳米级器件来说,它们是有源元件,因为它们的新颖性或增强性可能对许多技术领域都至关重要。纳米材料的特性,例如化学成分,形状,大小,界面和掺杂。

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