...
首页> 外文期刊>Advanced Materials >Ohmic-Contact-Gated Carbon Nanotube Transistors for High-Performance Analog Amplifiers
【24h】

Ohmic-Contact-Gated Carbon Nanotube Transistors for High-Performance Analog Amplifiers

机译:用于高性能模拟放大器的欧姆接触式碳纳米管晶体管

获取原文
获取原文并翻译 | 示例
           

摘要

The growing demand for ubiquitous data collection has driven the development of sensing technologies with local data processing. As a result, solution-processed semiconductors are widely employed due to their compatibility with low-cost additive manufacturing on a wide range of substrates. However, to fully realize their potential in sensing applications, high-performance scalable analog amplifiers must be realized. Here, ohmic-contact-gated transistors (OCGTs) based on solution-processed semiconducting single-walled carbon nanotubes are introduced to address this unmet need. This new device concept enables output current saturation in the short-channel limit without compromising output current drive. The resulting OCGTs are used in common-source amplifiers to achieve the highest width-normalized output current (approximate to 30 mu A mu m(-1)) and length-scaled signal gain (approximate to 230 mu m(-1)) to date for solution-processed semiconductors. The utility of these amplifiers for emerging sensing technologies is demonstrated by the amplification of complex millivolt-scale analog biological signals including the outputs of electromyography, photoplethysmogram, and accelerometer sensors. Since the OCGT design is compatible with other solution-processed semiconducting materials, this work establishes a general route to high-performance, solution-processed analog electronics.
机译:普遍存在数据收集的需求不断增长推动了具有本地数据处理的传感技术的开发。结果,溶液加工的半导体由于其与宽范围的基板上的低成本添加剂制造而兼容。然而,为了充分实现其在传感应用中的潜力,必须实现高性能可伸缩的模拟放大器。这里,引入基于溶液处理的半导体单壁碳纳米管的欧姆接触门控晶体管(OCGTS)以解决这种未满足的需求。这个新的设备概念可以在短通道限制中输出电流饱和,而不会影响输出电流驱动器。由此产生的OCGTS用于共同源放大器,以实现最高宽度归一化输出电流(近似到30μmUm(-1))和长度缩放的信号增益(近似到230μm(-1))解决方案处理半导体的日期。通过包括电拍摄,光增性仪表传感器的输出的复杂毫伏的模拟生物信号,对新出现的感测技术进行了用于新出现的感测技术的效用。由于OCGT设计与其他解决方案加工的半导体材料兼容,因此该工作建立了高性能,加工的模拟电子产品的一般途径。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号