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首页> 外文期刊>Advanced Optical Materials >Sequentially Assembled Graphene Layers on Silicon, the Role of Uncertainty Principles in Graphene–Silicon Schottky Junctions
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Sequentially Assembled Graphene Layers on Silicon, the Role of Uncertainty Principles in Graphene–Silicon Schottky Junctions

机译:硅上依次组装的石墨烯层,不确定性原理在石墨烯-硅肖特基结中的作用

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摘要

Owing to the atomic thickness of graphene, the out-of-plane velocity of carriers is entangled with the thickness of graphene layer as well as the quasiparticle lifetime by means of the position-momentum and energy-time uncertainty principles. The out-of-plane velocity is vital for thermionic emission of carriers across the Schottky junction at graphene-silicon interface. In this report, the effect of graphene layer thickening on the electronic and optoelectronic processes is studied in hybrid graphene-silicon Schottky junctions. The thickness of graphene layer is systematically increased via sequentially assembling of chemical vapor deposited (CVD-grown) graphene layers onto silicon. The assembled graphene layers are found to behave as structurally uncoupled layers leading to a universal scaling of in-plane current with the number of assembled layers. The reverse saturation current of the graphene-silicon junctions strongly correlates with the number of assembled graphene layers indicating the critical influence of graphene layer thickness on the electronic and optoelectronic properties of graphene-silicon junctions. The experimental observations are quantitatively analyzed based on the uncertainty principles. The effect of graphene layer thickening on the concentration and diffusion length of excess photogenerated charge carriers in graphene is investigated through lateral photovoltage spectroscopy. This work sheds light on the fundamental role of uncertainty principles in the hybrid 2D/3D junctions.
机译:由于石墨烯的原子厚度,通过位置动量和能量时间不确定性原理,载流子的平面外速度与石墨烯层的厚度以及准粒子寿命纠缠在一起。面外速度对于跨石墨烯-硅界面处肖特基结的载流子热电子发射至关重要。在这份报告中,研究了石墨烯-硅肖特基混合结中石墨烯层增厚对电子和光电过程的影响。石墨烯层的厚度可通过将化学气相沉积(CVD生长)的石墨烯层依次组装到硅上来系统地增加。发现组装的石墨烯层表现为结构上不耦合的层,从而导致平面电流随组装层数的普遍缩放。石墨烯-硅结的反向饱和电流与组装的石墨烯层的数量密切相关,这表明石墨烯层厚度对石墨烯-硅结的电子和光电性能具有关键影响。根据不确定性原理对实验观察结果进行定量分析。通过横向光电压谱研究了石墨烯层增厚对石墨烯中过量光生电荷载流子的浓度和扩散长度的影响。这项工作阐明了不确定性原理在2D / 3D混合结中的基本作用。

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