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首页> 外文期刊>American journal of applied sciences >Photoelectrochemical Corrosion of GaN/AlGaN-Based p-n Structures
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Photoelectrochemical Corrosion of GaN/AlGaN-Based p-n Structures

机译：GaN / AlGaN基p-n结构的光电化学腐蚀

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摘要

Direct water photoelectrolysis using Ⅲ-N materials is a promising way for hydrogen production. GaN/AlGaN based p-n structures were used as working electrodes in a photoelectrochemical process to investigate the material etching (corrosion). The structures were grown on sapphire substrates by chloride Hydride Vapor Phase Epitaxy (HVPE). First, the etching process occurs near vertically via channels associated with defects in the structure and penetrates deep into the structure. Then, the process involves etching of the n-type AlGaN barrier and n-GaN active layer in lateral direction resulting in formation of voids and cavities. The lateral etching is due to net positive charges at the AlGaN/GaN interfaces arising because of spontaneous and piezoelectric polarization in the structure and positively charged ionized donors in the space charge region of the p-n junction.
机译：使用Ⅲ-N材料进行直接水光电解是一种有前途的制氢方法。基于GaN / AlGaN的p-n结构在光电化学工艺中用作工作电极，以研究材料蚀刻（腐蚀）。该结构通过氯化物氢化物气相外延（HVPE）在蓝宝石衬底上生长。首先，刻蚀工艺通过与结构缺陷相关的通道在垂直方向附近发生，并深入到结构中。然后，该工艺涉及在横向方向上蚀刻n型AlGaN势垒和n-GaN活性层，从而形成空隙和空腔。横向蚀刻是由于结构中的自发极化和压电极化以及p-n结的空间电荷区域中带正电的离子化施主而在AlGaN / GaN界面处产生的净正电荷。

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