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首页> 外文期刊>Applied Computational Electromagnetics Society journal >Numerical Simulation of High Electron Mobility Transistors based on the Spectral Element Method
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Numerical Simulation of High Electron Mobility Transistors based on the Spectral Element Method

机译：基于谱元法的高电子迁移率晶体管的数值模拟

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摘要

spectral element method (SEM) is implemented for the numerical simulation of high electron mobility transistors (HEMTs) through a self-consistent solution of the Schrodinger-Poisson equations. The electron conduction band structure and electron density distribution are calculated and plotted, and results compared to those based on methods utilizing a finite-difference approach. Simulation accuracy and efficiency are analyzed and compared with traditional finite difference method (FDM). DC current-voltage (I-V) characteristics for the HEMT structure are simulated, based on a quasi-2D current model. The SEM approach offers advantages in speed and efficiency over FDM, while yielding results which conform well to reported experimental results. These advantages are particularly important for compound heterojunction devices with complex material profiles, for which FDM methods may be inefficient and computationally slow.
机译：光谱元素方法（SEM）通过Schrodinger-Poisson方程的自洽解实现了高电子迁移率晶体管（HEMT）的数值模拟。计算并绘制出电子导带结构和电子密度分布，并将结果与​​基于有限差分方法的结果进行比较。分析了仿真精度和效率，并与传统的有限差分法（FDM）进行了比较。基于准2D电流模型，模拟了HEMT结构的DC电流-电压（I-V）特性。 SEM方法在速度和效率方面优于FDM，同时产生的结果与已报道的实验结果非常吻合。这些优点对于具有复杂材料轮廓的复合异质结器件特别重要，因为对于这些异质结器件而言，FDM方法可能效率低下且计算速度较慢。

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