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首页> 外文期刊>_Applied Physics Express >Growth of ultra-high mobility In_(0.52)Al_(0.48)As/In_xGa_(1-x)As (x≥53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition
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Growth of ultra-high mobility In_(0.52)Al_(0.48)As/In_xGa_(1-x)As (x≥53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition

机译：使用InP / GaAs缓冲剂通过有机金属化学气相沉积在Si衬底上生长超高迁移率In_（0.52）Al_（0.48）As / In_xGa_（1-x）As（x≥53％）量子阱

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摘要

InGaAs quantum wells (QWs) cladded by InAlAs barriers were grown on Si by metalorganic chemical vapor deposition. InP/GaAs/Si buffer templates were first prepared using a two-step growth method. We were able to significantly reduce the dislocation density in the upper InP buffer and obtAIn smooth surface morphology by fine-tuning the growth parameters and inserting an InGaAs interlayer in the InP buffer. On these InP/ GaAs/Si compliant substrates, we investigated InGaAs QWs with various well/barrier parameters and Si-delta doping. We obtAIned two-dimensional electron gas mobilities over 10,000 cm~2 V~(-1) s~(-1) at 300 K and above 39,000 cm~2 V~(-1) s~(-1) at 77 K on Si substrates.
机译：通过金属有机化学气相沉积在硅上生长了覆盖有InAlAs阻挡层的InGaAs量子阱（QW）。首先使用两步生长方法制备InP / GaAs / Si缓冲液模板。通过微调生长参数并在InP缓冲液中插入InGaAs中间层，我们能够显着降低上部InP缓冲液和obtAIn光滑表面形态的位错密度。在这些符合InP / GaAs / Si的衬底上，我们研究了具有各种阱/势垒参数和Si-δ掺杂的InGaAs QW。我们观察到在300 K时超过10,000 cm〜2 V〜（-1）s〜（-1）和在77 K时超过39,000 cm〜2 V〜（-1）s〜（-1）的二维电子气迁移率。硅衬底。

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  • 来源
    《_Applied Physics Express》 |2014年第4期|045502.1-045502.4|共4页
  • 作者

    Qiang Li; Chak Wah Tang; Kei May Lau;

  • 作者单位

    Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;

    Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;

    Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;

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