Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched In_xGa_(1-x)Sb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition

著录项

• 来源
  《Applied Physics Letters》 |2016年第10期|102107.1-102107.4|共4页
• 作者

  Sa Hoang Huynh; Minh Thien Huu Ha; Huy Binh Do; Quang Ho Luc; Hung Wei Yu; Edward Yi Chang;

  展开▼
• 作者单位

  Department of Materials Science and Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 30010, Taiwan, R.O.C.;

  Department of Materials Science and Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 30010, Taiwan, R.O.C.;

  Department of Materials Science and Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 30010, Taiwan, R.O.C.;

  Department of Materials Science and Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 30010, Taiwan, R.O.C.;

  Department of Materials Science and Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 30010, Taiwan, R.O.C.;

  Department of Materials Science and Engineering, National Chiao-Tung University, 1001 University Road, Hsinchu 30010, Taiwan, R.O.C. ,Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan, R.O.C.;

  展开▼
• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词