A Gaas/aias Multilayer Cavity With Self-assembled Inas Quantum Dots Embedded In Strain-relaxed Barriers For Ultrafast All-optical Switching Applications

Takahiro Kitada; Toshiyuki Kanbara; Ken Morita; Toshiro Isu

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A Gaas/aias Multilayer Cavity With Self-assembled Inas Quantum Dots Embedded In Strain-relaxed Barriers For Ultrafast All-optical Switching Applications

机译：具有自组装Inas量子点的Gaas / aias多层腔体，其嵌入在应变松弛栅中，用于超快全光开关应用

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An optical Kerr signal has been simulated for GaAs/AIAs multilayer cavity structures by using the self-consistent transfer matrix method. Enhancement of the Kerr signal intensity was clearly demonstrated for the cavity mode (λ ～ 1504 nm) owing to the strong optical field in the multilayer cavity. The Kerr signal intensity can be further enhanced with the use of a higher nonlinear refractive index only for the half-wavelength (λ/2) cavity layer. We propose a GaAs/AIAs multilayer structure with the λ/2 cavity layer containing InAs quantum dots embedded in strain-relaxed barriers for an ultrafast optical Kerr gate switch with extremely low switching energy.

机译：通过使用自洽转移矩阵方法，对GaAs / AIAs多层腔结构的光学Kerr信号进行了仿真。由于多层腔中有很强的光场，在腔模（λ〜1504 nm）中，Kerr信号强度明显增强。仅对于半波长（λ/ 2）腔层使用较高的非线性折射率，即可进一步提高Kerr信号强度。我们提出了一种GaAs / AIAs多层结构，其中的λ/ 2腔层包含嵌入应变松弛势垒中的InAs量子点，用于开关能量极低的超快光学Kerr栅极开关。

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《Applied physics express》 |2008年第9期|36-38|共3页
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Takahiro Kitada; Toshiyuki Kanbara; Ken Morita; Toshiro Isu;
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1. GaAs/AIAs Multilayer Cavity with Er-Doped In As Quantum Dots Embedded in Strain-Relaxed InGaAs Barriers for Ultrafast All-Optical Switches [J] . Hyuga Ueyama, Tomoya Takahashi, Yoshinori Nakagawa, Japanese journal of applied physics . 2012,第4ISSUE2期

机译：GaAs / AIAs多层腔体，Er掺杂作为量子点嵌入在应变消除的InGaAs势垒中，用于超快全光开关
2. GaAs/AlAs Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Thin Strain-Relaxed In_(0.45)Ga_(0.55)As Barriers for Ultrafast All-Optical Switches [J] . Ken Morita, Huga Ueyama, Yukinori Yasunaga, Japanese journal of applied physics . 2013,第4Issue2期

机译：嵌入应变缓和的In_（0.45）Ga_（0.55）As阻挡层的Er掺杂InAs量子点的GaAs / AlAs多层腔，用于超快全光开关
3. Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed In_(0.35)Ga_(0.65)As barriers for ultrafast nonlinear optical switching applications [J] . Takahiro Kitada, Takuya Mukai, Tomoya Takahashi, Journal of Crystal Growth . 2009,第7期

机译：快速应变非线性In_（0.35）Ga_（0.65）As势垒中嵌入的自组装InAs量子点的载流子快速松弛
4. Self-assembled InAs quantum dots within a vertical cavity structure for all-optical switching devices [C] . C. Y. Jin, O. Kojima, T. Inoue, Quantum dots and nanostructures: Synthesis, characterization, and modeling VII . 2010

机译：用于全光开关器件的垂直腔结构内的自组装InAs量子点
5. Self-Assembled InAs/GaAs/ Quantum Dot Solar Cells. [D] . Li, Tian. 2015

机译：自组装的InAs / GaAs /量子点太阳能电池。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity [O] . Jin C. Y., Kojima Osamu, Kita Takashi, 2009

机译：基于腔内InAs / GaAs量子点的垂直几何全光开关

A Gaas/aias Multilayer Cavity With Self-assembled Inas Quantum Dots Embedded In Strain-relaxed Barriers For Ultrafast All-optical Switching Applications

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