...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Physics Letters >High performance bimorph piezoelectric MEMS harvester via bulk PZT thick films on thin beryllium-bronze substrate
【24h】

High performance bimorph piezoelectric MEMS harvester via bulk PZT thick films on thin beryllium-bronze substrate

机译：通过在铍青铜薄基板上形成块状PZT厚膜的高性能双压电晶片压电MEMS采集器

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This letter presents a high performance bimorph piezoelectric MEMS harvester with bulk PZT thick films on both sides of a flexible thin beryllium-bronze substrate via bonding and thinning technologies. The upper and lower PZT layers are thinned down to about 53 µm and 76 µm, respectively, and a commercial beryllium bronze with the thickness of about 50 µm is used as the substrate. The effective volume of this device is 30.6 mm3. The harvester with a tungsten proof mass generated the close-circuit peak-to-peak voltage of 53.1 V, the output power of 0.979 mW, and the power density of 31.99 mW/cm~3 with the matching load resistance of 360 kΩ at the applied acceleration amplitude of 3.5 g and the applied frequency of 77.2 Hz. Meanwhile, in order to evaluate the stability, the device was measured continuously under applied acceleration amplitudes of 1.0 g and 3.5 g for one hour and demonstrated a good stability. Then, the harvester was utilized to light up LEDs and about twenty-one serial LEDs were lighted up at resonance under an applied acceleration amplitude of 3.0g.
机译：这封信提出了一种高性能的双压电晶片压电MEMS收割机，该收割机通过粘结和薄化技术在柔性薄铍青铜基板的两侧均具有大块PZT厚膜。上下PZT层分别减薄至约53 µm和76 µm，并使用厚度约为50 µm的市售铍青铜作为衬底。该设备的有效体积为30.6 mm3。带有钨保护质量的收割机在关闭时产生的闭路峰峰值电压为53.1 V，输出功率为0.979 mW，功率密度为31.99 mW / cm〜3，匹配负载电阻为360kΩ。施加的加速度幅度为3.5 g，施加的频率为77.2 Hz。同时，为了评估稳定性，在施加的加速度值为1.0 g和3.5 g的情况下连续测量该设备一小时，并显示出良好的稳定性。然后，利用采集器点亮LED，并在施加的3.0g加速幅度下以共振方式点亮约21个串联LED。

著录项

  • 来源
    《Applied Physics Letters》 |2017年第1期|013902.1-013902.5|共5页
  • 作者

    Zhiran Yi; Bin Yang; Guimiao Li; Jingquan Liu; Xiang Chen; Xiaolin Wang; Chunsheng Yang;

  • 作者单位

    National Key Laboratory of Science and Technology on MicrolNano Fabrication,Department of MicrolNano Electronics, Shanghai Jiao Tong University, Shanghai 200240,China and Key Laboratory for Thin Film and Microfabrication of Ministry of Education,Shanghai Jiao Tong University, Shanghai 200240, China;

    National Key Laboratory of Science and Technology on MicrolNano Fabrication,Department of MicrolNano Electronics, Shanghai Jiao Tong University, Shanghai 200240,China and Key Laboratory for Thin Film and Microfabrication of Ministry of Education,Shanghai Jiao Tong University, Shanghai 200240, China;

    National Key Laboratory of Science and Technology on MicrolNano Fabrication,Department of MicrolNano Electronics, Shanghai Jiao Tong University, Shanghai 200240,China and Key Laboratory for Thin Film and Microfabrication of Ministry of Education,Shanghai Jiao Tong University, Shanghai 200240, China;

    National Key Laboratory of Science and Technology on MicrolNano Fabrication,Department of MicrolNano Electronics, Shanghai Jiao Tong University, Shanghai 200240,China and Key Laboratory for Thin Film and Microfabrication of Ministry of Education,Shanghai Jiao Tong University, Shanghai 200240, China;

    National Key Laboratory of Science and Technology on MicrolNano Fabrication,Department of MicrolNano Electronics, Shanghai Jiao Tong University, Shanghai 200240,China and Key Laboratory for Thin Film and Microfabrication of Ministry of Education,Shanghai Jiao Tong University, Shanghai 200240, China;

    National Key Laboratory of Science and Technology on MicrolNano Fabrication,Department of MicrolNano Electronics, Shanghai Jiao Tong University, Shanghai 200240,China and Key Laboratory for Thin Film and Microfabrication of Ministry of Education,Shanghai Jiao Tong University, Shanghai 200240, China;

    National Key Laboratory of Science and Technology on MicrolNano Fabrication,Department of MicrolNano Electronics, Shanghai Jiao Tong University, Shanghai 200240,China and Key Laboratory for Thin Film and Microfabrication of Ministry of Education,Shanghai Jiao Tong University, Shanghai 200240, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号