Anneal treatment to reduce the creation rate of light-induced metastable defects in device-quality hydrogenated amorphous silicon

David C. Bobela; Howard M. Branz; Paul Stradins

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Anneal treatment to reduce the creation rate of light-induced metastable defects in device-quality hydrogenated amorphous silicon

机译：退火处理可降低器件质量的氢化非晶硅中光诱导的亚稳态缺陷的产生率

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We observe a dramatic reduction in the Staebler-Wronski metastable defect creation efficiency in device-quality films of hydrogenated amorphous silicon after they undergo a 20 min anneal treatment at 350 to 400 °C. After several hours of rapid degradation with a high intensity pulsed laser, there are about half as many total dangling bond defects in the annealed samples as in unannealed control samples. This reduction is observed in both 1.02-/im- and 0.22-/im-thick films, indicating it is not a surface-related artifact. The improved stability is likely caused by H motion, which restructures the Si-Si network and H-related nanovoids.

机译：我们观察到氢化非晶硅的器件质量薄膜在350至400°C的温度下进行20分钟的退火处理后，Staebler-Wronski亚稳态缺陷产生效率的显着降低。在用高强度脉冲激光快速降解几个小时后，退火样品中的总悬空键缺陷大约是未退火对照样品中的一半。在厚度为1.02 // im的薄膜和厚度为0.22 // im的薄膜中均观察到这种减少，表明它不是与表面有关的伪影。改善的稳定性可能是由H运动引起的，它重新构造了Si-Si网络和H相关的纳米空隙。

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《Applied Physics Letters》 |2011年第20期|p.98201908.1-98201908.3|共3页
作者
David C. Bobela; Howard M. Branz; Paul Stradins;
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作者单位

National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401, USA;

National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401, USA;

National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Light-induced creation of metastable defects in hydrogenated amorphous silicon carbide [J] . Reitano R., Foti G., Baeri A. Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties . 2001,第6期

机译：光诱导氢化非晶碳化硅中亚稳缺陷的产生
2. Light-induced structural changes and their correlation to metastable defect creation in intrinsic hydrogenated amorphous silicon films [J] . Han DX., Yue GZ., Wang Q., Physical Review, B. Condensed Matter . 2000,第11期

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3. Light-induced creation of metastable defects in hydrogenated amorphous silicon studied by computer simulations of constant photocurrent measurements [J] . Schmidt JA., Koropecki RR., Buitrago RH., Physical Review, B. Condensed Matter . 1999,第7期

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4. Mechanisms for Defect Creation and Removal in Hydrogenated and Deuterated Amorphous Silicon Studied Using Thin Film Transistors [C] . Andrew J. Flewitt, Shufan Lin, William I. Milne, Materials Research Society Symposium on Amorphous and Polycrystalline Thin-Film Silicon Science and Technology . 2007

机译：使用薄膜晶体管研究氢化和氘化非晶硅中缺陷的产生和去除机制
5. Improving the light-induced degradation of hydrogenated amorphous silicon solar cells using fabrication at elevated temperatures and low pressure [D] . Modtland, Brian Joseph 2013

机译：通过在高温和低压下制造来改善氢化非晶硅太阳能电池的光诱导降解
6. Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process [O] . Israel Vivaldo, Roberto C. Ambrosio, Roberto López, 2020

机译：通过快速热退火工艺增强氢化非晶碳化硅薄膜的光致发光
7. Investigation of light-induced defects in hydrogenated amorphous silicon by low temperature annealing and pulsed degradation [O] . Heck Stephan 2003

机译：通过低温退火和脉冲降解研究氢化非晶硅中的光致缺陷

Anneal treatment to reduce the creation rate of light-induced metastable defects in device-quality hydrogenated amorphous silicon

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