Interaction between hydrogen and the Fe-B pair in boron-doped p-type silicon

C. K. Tang; L. Vines; B. G. Svensson; E. V. Monakhov

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Interaction between hydrogen and the Fe-B pair in boron-doped p-type silicon

机译：硼掺杂的p型硅中氢与Fe-B对的相互作用

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The effect of hydrogen incorporation into iron-contaminated boron-doped Cz-Si has been investigated using deep level transient spectroscopy. In-diffusion of hydrogen by wet chemical etching followed by reverse bias annealing of Al, Schottky diodes result in the appearance of the defect level characteristic to interstitial iron (Fe_i), and the concentration of iron-boron pairs (Fe-B) decreases correspondingly. Quantitative observations from various defect concentration versus depth profiles imply strongly that H promotes dissociation of Fe-B releasing Fe_i whereas no detectable passivation of Fe-B or Fe_i by H occurs.

机译：已经使用深能级瞬态光谱研究了氢掺入铁污染的掺硼Cz-Si中的影响。氢通过湿法化学刻蚀扩散扩散，然后进行Al的反向偏置退火，肖特基二极管导致出现了间隙铁的特征能级（Fe_i），并且铁硼对（Fe-B）的浓度相应降低。从各种缺陷浓度对深度分布的定量观察强烈暗示，H促进了Fe-B的解离，释放出Fe_i，而没有发生可检测到的Fe-B或Fe_i钝化的现象。

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来源
《Applied Physics Letters》 |2011年第5期|p.052106.1-052106.3|共3页
作者
C. K. Tang; L. Vines; B. G. Svensson; E. V. Monakhov;
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作者单位

University of Oslo, Physics department/Center for Materials science and Nanotechnology, P.O. Box 1048 Blindern, Oslo N-0316, Norway;

University of Oslo, Physics department/Center for Materials science and Nanotechnology, P.O. Box 1048 Blindern, Oslo N-0316, Norway;

University of Oslo, Physics department/Center for Materials science and Nanotechnology, P.O. Box 1048 Blindern, Oslo N-0316, Norway;

University of Oslo, Physics department/Center for Materials science and Nanotechnology, P.O. Box 1048 Blindern, Oslo N-0316, Norway;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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1. Hydrogen-induced dissociation of the Fe-B pair in boron-doped p-type silicon [J] . Tang C.K., Vines L., Svensson B.G., Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2011,第Null期

机译：氢致硼掺杂的p型硅中Fe-B对的解离
2. Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells [J] . Isao SAKATA, Mitsuyuki YAMANAKA, Ryuichi SHIMOKAWA Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第10期

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3. Band Lineup at the Interface between Boron-Doped P-Type Hydrogenated Amorphous Silicon and Crystalline Silicon Studied by Internal Photoemission [J] . Isao SAKATA, Mitsuyuki YAMANAKA, Ryuichi SHIMOKAWA Japanese Journal of Applied Physics. Part 2, Letters . 2004,第7B期

机译：内部光发射研究掺硼P型氢化非晶硅与晶体硅界面上的能带排列
4. Hydrogen-induced dissociation of the Fe-B pair in boron-doped p-type silicon [C] . C. K. Tang, L. Vines, B. G. Svensson, Gettering and defect engineering in semiconductor technology XIV . 2011

机译：氢致硼掺杂的p型硅中Fe-B对的解离
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8. Hydrogen diffusion and microstructure in undoped and boron-doped hydrogenated amorphous silicon: An IR and SIMS study. [R] . S. Mitra 1991

机译：未掺杂和掺硼氢化非晶硅中的氢扩散和微结构：IR和sIms研究。

Interaction between hydrogen and the Fe-B pair in boron-doped p-type silicon

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