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首页> 外文期刊>Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena >Hydrogen-induced dissociation of the Fe-B pair in boron-doped p-type silicon
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Hydrogen-induced dissociation of the Fe-B pair in boron-doped p-type silicon

机译：氢致硼掺杂的p型硅中Fe-B对的解离

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The interaction between hydrogen and the iron-boron pair (Fe-B) has been investigated in iron-contaminated boron-doped Cz-Si using capacitance-voltage measurements (CV) and deep level transient spectroscopy (DLTS). Introduction of hydrogen was performed by wet chemical etching and subsequent reverve bias annealing of Al Schottky diodes. The treatment led to the appearance of the defect level characteristic to interstitial iron (Fe_i) with a corresponding decrease in the concentration of the Fe-B pair. Concentration versus depth profiles of the defects show that dissociation of Fe-B occurs in the depletion region and capacitance-voltage measurements unveil a decrease in the charge carrier concentration due to passivation of B. These quantitative observations imply strongly that H promotes dissociation of Fe-B releasing Fe_i whereas no detectable passivation of Fe-B or Fe_i by H occurs.
机译：使用电容电压测量（CV）和深能级瞬态光谱法（DLTS），在铁污染的掺硼Cz-Si中研究了氢与铁硼对（Fe-B）之间的相互作用。氢的引入是通过湿化学蚀刻和随后的Al Schottky二极管的反向偏置退火来进行的。这种处理导致出现了组织间铁（Fe_i）的缺陷能级，同时相应地降低了Fe-B对的浓度。缺陷浓度与深度的关系曲线表明，Fe-B的解离发生在耗尽区，电容电压测量揭示了由于B的钝化导致电荷载流子浓度的降低。这些定量观察强烈地暗示H促进了Fe-的解离B释放Fe_i，而没有发生H可检测到的Fe-B或Fe_i钝化。

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