High quality GaN grown on silicon(111) using a Si_xN_y interlayer by metal-organic vapor phase epitaxy

Kai Cheng; M. Leys; S. Degroote; M. Germain; G. Borghs

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High quality GaN grown on silicon(111) using a Si_xN_y interlayer by metal-organic vapor phase epitaxy

机译：通过金属有机气相外延使用Si_xN_y中间层在硅（111）上生长高质量的GaN

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High quality GaN layers with dislocation density of (3.0 ± 0.5) × 10~8/cm~2 have been grown on silicon(111) substrates using a combination of AlGaN intermediate layers and a Si_xN_y interlayer. A smooth and fully coalesced layer was obtained by virtue of

机译：使用AlGaN中间层和Si_xN_y中间层的组合，在硅（111）衬底上生长了位错密度为（3.0±0.5）×10〜8 / cm〜2的高质量GaN层。通过以下方法获得了光滑且完全聚结的层：

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《Applied Physicsletters》 |2008年第19期|135-137|共3页
作者
Kai Cheng; M. Leys; S. Degroote; M. Germain; G. Borghs;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded Al_xGa_(1-x)N interlayers via metal-organic chemical vapor deposition [J] . R.F. Xiang, Y.-Y. Fang, J.N. Dai Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2011,第5期

机译：通过金属有机化学气相沉积在具有薄的非线性成分分级的Al_xGa_（1-x）N中间层的Si（111）上生长的高质量GaN外延层
2. Corrigendum to: 'High-quality InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy' [Superlatt. Microstruct. 40 (2006) 214-218] [J] . M. Hiroki, H. Yokoyama, N. Watanabe, Superlattices and microstructures . 2008,第3期

机译：更正为：“通过金属有机气相外延生长的高质量InAlN / GaN异质结构” [Superlatt。微结构。 40（2006）214-218]
3. High-quality InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy [J] . M. Hiroki, H. Yokoyama, N. Watanabe, Superlattices and microstructures . 2006,第4a6期

机译：金属有机气相外延生长的高质量InAlN / GaN异质结构
4. Comparative optical characterization of GaN grown by metal-organic vapor phase epitaxy, gas source molecular beam epitaxy and halide vapor phase epitaxy [C] . M.Leroux, B.Beaumont, N.Grandjean, Symposium C on UV, blue and green light emission from semiconductor materials;Symposium on nonlinear optical and optoelectronic organic materials . 1997

机译：金属 - 有机气相外延，气源分子束外延和卤化物气相外延生长GaN的对比光学特征
5. Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications. [D] . Shintri, Shashidhar S. 2012

机译：纳米图案化硅上金属有机气相外延生长的（211）B碲化镉缓冲层的生长和表征，用于基于碲化汞的红外探测器。
6. Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy [O] . Galia Pozina, Azat R. Gubaydullin, Maxim I. Mitrofanov, -1

机译：聚焦离子束和金属有机气相外延制备高质量GaN横向纳米线和平面腔的方法
7. Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy [O] . Christopher T. Shelton, Isaac Bryan, Elizabeth A. Paisley, 2017

机译：通过受限区域金属 - 有机气相外延生长的无台阶GaN表面

High quality GaN grown on silicon(111) using a Si_xN_y interlayer by metal-organic vapor phase epitaxy

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