Molecular-beam epitaxial growth of Ⅲ-Ⅴ semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication

Donghun Choi; Eunji Kim; Paul C. Mclntyre; James S. Harris

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Molecular-beam epitaxial growth of Ⅲ-Ⅴ semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication

机译：Ⅲ-Ⅴ族半导体在Ge / Si上的分子束外延生长，用于金属氧化物半导体器件的制造

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We describe the fabrication of Ⅲ-Ⅴ metal-oxide-semiconductor (MOS) devices on Ge/Si virtual substrates using molecular-beam epitaxy. Migration-enhanced epitaxy and low temperature normal GaAs growth produced a sufficiently smooth surface to deposit gate o

机译：我们描述了使用分子束外延在Ge / Si虚拟衬底上制造Ⅲ-Ⅴ型金属氧化物半导体（MOS）器件。迁移增强的外延和低温正常的GaAs生长产生了足够光滑的表面以沉积栅极

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《Applied Physicsletters》 |2008年第20期|277-279|共3页
作者
Donghun Choi; Eunji Kim; Paul C. Mclntyre; James S. Harris;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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Molecular-beam epitaxial growth of Ⅲ-Ⅴ semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication

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